- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 276
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Linear Technology/Analog Devices |
723
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR N-CH SYNC 8-MSOP
|
Tube | 4.5 V ~ 13.5 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 8ns,5ns | 1.85V,3.25V | 2.5A,3A | ||||
Linear Technology/Analog Devices |
416
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR N-CH MOSFET 10MSOP
|
Tube | 3.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad | 10-MSOP-EP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 90ns,40ns | - | - | ||||
Linear Technology/Analog Devices |
377
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER N-CH QUAD 20DIP
|
Tube | 8 V ~ 48 V | 0°C ~ 125°C (TJ) | 20-DIP (0.300",7.62mm) | 20-PDIP | Through Hole | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | - | 0.8V,2V | - | ||||
Linear Technology/Analog Devices |
235
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR N-CH MOSFET 16MSOP
|
Tube | 3.5 V ~ 135 V | -40°C ~ 150°C (TJ) | 16-TFSOP (0.118",3.00mm Width) Exposed Pad,12 Leads | 16-MSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 90ns,40ns | - | - | ||||
Linear Technology/Analog Devices |
459
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH 16DIP
|
Tube | 5 V ~ 30 V | 0°C ~ 125°C (TJ) | 16-DIP (0.300",7.62mm) | 16-PDIP | Through Hole | Inverting,Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 56V | 130ns,120ns | 0.8V,2V | 500mA,500mA | ||||
Linear Technology/Analog Devices |
959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR N-CH 16-SOIC
|
Tube | 10 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns,60ns | 0.8V,2V | 1.5A,1.5A | ||||
Linear Technology/Analog Devices |
225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1/2BRDG NCH 16DIP
|
Tube | 5 V ~ 30 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300",7.62mm) | 16-PDIP | Through Hole | Inverting,Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 56V | 130ns,120ns | 0.8V,2V | 500mA,500mA | ||||
Linear Technology/Analog Devices |
2,765
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI-SIDE DUAL 8SOIC
|
Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | 2 | N-Channel MOSFET | - | - | 0.8V,2V | - | ||||
Linear Technology/Analog Devices |
237
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR N-CH MOSFET 10MSOP
|
Tube | 3.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad | 10-MSOP-EP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 90ns,40ns | - | - | ||||
Linear Technology/Analog Devices |
405
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER N-CH 8-SOIC
|
Tube | 5 V ~ 25 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,8ns | 1.8V,2V | 6A,6A | ||||
Linear Technology/Analog Devices |
123
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER N-CH 8-SOIC
|
Tube | 5 V ~ 25 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,8ns | 1.8V,2V | 6A,6A | ||||
Linear Technology/Analog Devices |
270
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR N-CH SYNC HV 8MSOP
|
Tube | 4.5 V ~ 13.5 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 8ns,5ns | 1.85V,3.25V | 2.5A,3A | ||||
Linear Technology/Analog Devices |
524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH 16DIP
|
Tube | 10 V ~ 15 V | 0°C ~ 125°C (TJ) | 16-DIP (0.300",7.62mm) | 16-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns,60ns | 0.8V,2V | 1.5A,1.5A | ||||
Linear Technology/Analog Devices |
737
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DRIVER N-CH 14SOIC
|
Tube | 10 V ~ 15 V | -40°C ~ 125°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns,60ns | 0.8V,2V | 1.5A,1.5A | ||||
Linear Technology/Analog Devices |
400
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH 16DIP
|
Tube | 10 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-DIP (0.300",7.62mm) | 16-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns,60ns | 0.8V,2V | 1.5A,1.5A | ||||
Linear Technology/Analog Devices |
321
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER N-CH QUAD 20DIP
|
Tube | 8 V ~ 48 V | -40°C ~ 150°C (TJ) | 20-DIP (0.300",7.62mm) | 20-PDIP | Through Hole | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | - | 0.8V,2V | - | ||||
Linear Technology/Analog Devices |
250
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI-SIDE QUAD16SOIC
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | - | 0.8V,2V | - | ||||
Linear Technology/Analog Devices |
119
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH-SIDE DVR HS HV 8-MSOP
|
Tube | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 80V | 10ns,7ns | 1.2V,1.6V | 1.1A,1.1A | ||||
Linear Technology/Analog Devices |
123
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER N-CH 10-MSOP
|
Tube | 5 V ~ 25 V | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad | 10-MSOP-EP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns,8ns | 1.8V,2V | 6A,6A | ||||
Linear Technology/Analog Devices |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR N-CH MOSFET 16 MSOP
|
Tape & Reel (TR) | 3.5 V ~ 60 V | -40°C ~ 125°C (TJ) | 16-TFSOP (0.118",3.00mm Width) Exposed Pad | 16-MSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 90ns,40ns | - | - |