Fabricant:
Voltage - Supply:
Supplier Device Package:
Driven Configuration:
High Side Voltage - Max (Bootstrap):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 9
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX15054AUT+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR HIGH SIDE SOT-23-6
Tape & Reel (TR) 4.6 V ~ 5.5 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount High-Side N-Channel MOSFET 65V 1.8V,3.9V 2.5A,2.5A
IXDN430MYI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET/IGBT DRIVER TO-263
Bulk 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Low-Side IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 30A,30A
IXDD430MYI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
Bulk 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Low-Side IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 30A,30A
IXDD430YI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
Bulk 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Low-Side IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 30A,30A
IXDN430YI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
Tube 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Low-Side IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 30A,30A
IXDD430CI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
Bulk 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Low-Side IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 30A,30A
IXDD430MCI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
Bulk 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Low-Side IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 30A,30A
IXDN430CI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
Tube 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Low-Side IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 30A,30A
IXDN430MCI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO220-5
Bulk 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Low-Side IGBT,N-Channel,P-Channel MOSFET - 0.8V,3.5V 30A,30A