Découvrez les produits 7
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
UC3705DTR
Texas Instruments
Enquête
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MOQ: 2500  MPQ: 1
IC HS POWER DRIVER 8-SOIC
5 V ~ 40 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting N-Channel MOSFET 0.8V,2.2V 1.5A,1.5A
TC4422EMF713
Microchip Technology
Enquête
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MOQ: 3300  MPQ: 1
IC MOSFET DRIVER 9A N-INV 8DFN
4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN-S (6x5) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 0.8V,2.4V 9A,9A
TC4421EMF713
Microchip Technology
Enquête
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MOQ: 3300  MPQ: 1
IC MOSFET DRIVER 9A INV 8DFN
4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN-S (6x5) Inverting IGBT,N-Channel,P-Channel MOSFET 0.8V,2.4V 9A,9A
TC4422VMF713
Microchip Technology
Enquête
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MOQ: 3300  MPQ: 1
IC MOSFET DRIVER 9A N-INV 8DFN
4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN-S (6x5) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 0.8V,2.4V 9A,9A
TC4421VMF713
Microchip Technology
Enquête
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MOQ: 3300  MPQ: 1
IC MOSFET DRIVER 9A INV 8DFN
4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN-S (6x5) Inverting IGBT,N-Channel,P-Channel MOSFET 0.8V,2.4V 9A,9A
TC4421ESM713
Microchip Technology
Enquête
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MOQ: 2100  MPQ: 1
IC MOSFET DVR 9A HS INV 8-SOIJ
4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.209",5.30mm Width) 8-SOIJ Inverting IGBT,N-Channel,P-Channel MOSFET 0.8V,2.4V 9A,9A
TC4422ESM713
Microchip Technology
Enquête
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MOQ: 2100  MPQ: 1
IC MOSFET DVR 9A HS N-INV 8-SOIJ
4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.209",5.30mm Width) 8-SOIJ Non-Inverting IGBT,N-Channel,P-Channel MOSFET 0.8V,2.4V 9A,9A