- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 21
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DVR 1CH 1A LOW SOT23-5
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4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Inverting,Non-Inverting | Single | 1 | N-Channel MOSFET | - | 1.4A,1.4A | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DVR SGL 1A EXTER SOT23-5
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Non-Inverting | Single | 1 | N-Channel MOSFET | - | 1.4A,1.4A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8DFN
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8SOIC
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8SOIC
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8SOIC
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8SOIC
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8SOIC
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8SOIC
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8SOIC
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8SOIC
|
4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 4A 8-SOIC
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 4A 8-SOIC
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 4A 8-SOIC
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 4A 8-DFN
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (4x5) | Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER 4A 8-DFN
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (4x5) | Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER 4A 6-DFN
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER DUAL 4A 6-DFN
|
4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 0.8V,3V | 4A,4A |