- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 167
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC DRVR HALF BRIDGE 2A 16-MLP
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Tape & Reel (TR) | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-VDFN Exposed Pad | 16-MLP (7x6) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 6V，9.5V | 2A，2A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC DRVR HALF BRIDGE 2A 16-MLP
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Tape & Reel (TR) | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-VDFN Exposed Pad | 16-MLP (7x6) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 6V，9.5V | 2A，2A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 275 MPQ: 1
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IC DRVR HALF BRIDGE 2A 14DIP
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Tube | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 6V，9.6V | 2A，2A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
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HIGH PERFORMANCE DUAL MOS
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- | - | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (4x4) | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | 200V | 0.8V，2.7V | 4A，4A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
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HIGH PERFORMANCE DUAL MOS
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- | - | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WDFN (4x4) | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | 200V | 0.8V，2.7V | 4A，4A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC POWER MANAGEMENT
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Tube | - | 4 V ~ 6.5 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-DFN (2x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 42V | 3V，6.5V | 3.2A，4.5A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC POWER MANAGEMENT
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Tube | - | 4 V ~ 6.5 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-DFN (2x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 42V | 3V，6.5V | 3.2A，4.5A |
