Découvrez les produits 32
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IX4426MTR
IXYS Integrated Circuits Division
Enquête
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MOQ: 1  MPQ: 1
IC MOSFET DVR INV 1.5A 8-DFN
- 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN (3x3) Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.5A,1.5A
MAX8791BGTA+T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC MOSF DRIVER 1PH SYNCH 8TQFN
Tape & Reel (TR) 4.2 V ~ 5.5 V -40°C ~ 150°C (TJ) 8-WQFN Exposed Pad 8-TQFN-EP Non-Inverting Synchronous Half-Bridge N-Channel MOSFET - - 2.2A,2.7A
MAX8791GTA+T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 8-TQFN
Tape & Reel (TR) 4.2 V ~ 5.5 V -40°C ~ 150°C (TJ) 8-WQFN Exposed Pad 8-TQFN-EP Non-Inverting Synchronous Half-Bridge N-Channel MOSFET - - 2.2A,2.7A
MAX8791BGTA+
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSF DRIVER 1PH SYNCH 8TQFN
Tube 4.2 V ~ 5.5 V -40°C ~ 150°C (TJ) 8-WQFN Exposed Pad 8-TQFN-EP Non-Inverting Synchronous Half-Bridge N-Channel MOSFET - - 2.2A,2.7A
MAX8791GTA+
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRIVER 8-TQFN
Tube 4.2 V ~ 5.5 V -40°C ~ 150°C (TJ) 8-WQFN Exposed Pad 8-TQFN-EP Non-Inverting Synchronous Half-Bridge N-Channel MOSFET - - 2.2A,2.7A
CHL8515CRT
Infineon Technologies
Enquête
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MOQ: 3000  MPQ: 1
IC GATE DRVR HI/LOW SIDE 10DFN
Tape & Reel (TR) 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 35V 0.8V,1V 2A,2A
CHL8515CRT
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DRVR HI/LOW SIDE 10DFN
Cut Tape (CT) 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 35V 0.8V,1V 2A,2A
CHL8515CRT
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DRVR HI/LOW SIDE 10DFN
- 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 35V 0.8V,1V 2A,2A
CHL8550CRT
Infineon Technologies
Enquête
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MOQ: 3000  MPQ: 1
IC GATE DRVR HI/LOW SIDE 10DFN
Tape & Reel (TR) 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 35V 0.8V,1V 2A,2A
CHL8550CRT
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DRVR HI/LOW SIDE 10DFN
Cut Tape (CT) 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 35V 0.8V,1V 2A,2A
CHL8550CRT
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC GATE DRVR HI/LOW SIDE 10DFN
- 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 35V 0.8V,1V 2A,2A
CHL8505CRT
Infineon Technologies
Enquête
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MOQ: 3000  MPQ: 1
IC GATE DRIVER 5V 10DFN
Tape & Reel (TR) 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 35V 0.8V,1V 2A,2A