- Voltage - Supply:
-
- Operating Temperature:
-
- Gate Type:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 11
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Gate Type | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Gate Type | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
18,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | - | ||||
Infineon Technologies |
2,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | - | ||||
Infineon Technologies |
1,963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 18000 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT,N-Channel MOSFET | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC HALF BRIDGE DRIVER W/DIO 8DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | N-Channel MOSFET | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 17000 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | IGBT,N-Channel MOSFET | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | N-Channel MOSFET | 180mA,260mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -55°C ~ 150°C (TJ) | N-Channel MOSFET | - |