- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Gate Type：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 17
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Gate Type | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Gate Type | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
18,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | N-Channel MOSFET | - | ||
|
|
|
Infineon Technologies |
2,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | N-Channel MOSFET | - | ||
|
|
|
Infineon Technologies |
3,137
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRDG DVR SELF-OSC 8SOIC
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | N-Channel MOSFET | - | ||
|
|
|
Infineon Technologies |
1,963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | N-Channel MOSFET | - | ||
|
|
|
Infineon Technologies |
258
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | N-Channel MOSFET | - | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8SOIC
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10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | N-Channel MOSFET | 180mA，260mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 18000 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | N-Channel MOSFET | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | N-Channel MOSFET | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 380 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8SOIC
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | N-Channel MOSFET | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8SOIC
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | N-Channel MOSFET | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | IGBT，N-Channel MOSFET | 250mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | N-Channel MOSFET | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC HALF BRIDGE DRIVER W/DIO 8DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | N-Channel MOSFET | - | ||
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|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 95 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8SOIC
|
10 V ~ 15.6 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | N-Channel MOSFET | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 17000 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | IGBT，N-Channel MOSFET | 250mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | N-Channel MOSFET | 180mA，260mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | N-Channel MOSFET | - |
