- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Gate Type：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 20
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Synchronous | 2 | N-Channel MOSFET | 100V | - | 1A，1A | ||
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|
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Infineon Technologies |
28,842
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.7V | 1.9A，2.3A | ||
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|
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Infineon Technologies |
11,287
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.7V | 1.9A，2.3A | ||
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|
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Infineon Technologies |
9,262
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 14SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.7V | 1.9A，2.3A | ||
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|
|
Infineon Technologies |
6,636
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
6,862
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.7V | 1.9A，2.3A | ||
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|
|
ON Semiconductor |
6,144
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 2.5A，2.5A | ||
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|
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Infineon Technologies |
4,982
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 1.9A，2.3A | ||
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|
|
Infineon Technologies |
2,536
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 1.9A，2.3A | ||
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|
|
Infineon Technologies |
4,734
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 1.9A，2.3A | ||
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|
|
Diodes Incorporated |
1,404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 1.9A，2.3A | ||
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|
|
Infineon Technologies |
1,026
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 700V | 0.8V，2.7V | 1.9A，2.3A | ||
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|
|
Infineon Technologies |
2,676
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 1.9A，2.3A | ||
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|
|
Infineon Technologies |
553
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Independent | 2 | N-Channel MOSFET | 100V | - | 1A，1A | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL BRIDGE 16-SOIC
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | RC Input Circuit | Synchronous | 4 | N-Channel MOSFET | 100V | - | 1.2A，1.2A | ||
|
|
ON Semiconductor |
2,345
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DVR HV OSC 8SOIC
|
- | 8 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 600V | - | 500mA，1A | |||
|
|
ON Semiconductor |
1,995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DVR HV OSC 8SOIC
|
- | 8 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 600V | - | 500mA，1A | |||
|
|
ON Semiconductor |
1,605
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HIGH VOLT 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | N-Channel MOSFET | 600V | 0.8V，2.3V | 1.4A，2.2A |
