- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 29
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
4,635
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
3,509
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
1,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR MOSFET DUAL NON-INV 8SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
|
Maxim Integrated |
1,523
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
|
Maxim Integrated |
140
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
|
|
|
Maxim Integrated |
200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
|
Maxim Integrated |
92
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
76
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
100
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
6
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 100 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC DVR MOSFET DUAL NON-INV 8SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC DVR DUAL-POWER MOSFET 8-DIP
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- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC DVR DUAL-POWER MOSFET 8-SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC DVR DUAL-POWER MOSFET 8-DIP
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC DVR DUAL-POWER MOSFET 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 2A，2A | ||
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|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HI/LO SIDE 8-DIP
|
- | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 1.2V，2.5V | 4.5A，4.5A | ||
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|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 8100 MPQ: 1
|
IC GATE DRIVER HI LOW SIDE 8-SOP
|
- | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 1.2V，2.5V | 4.5A，4.5A | ||
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|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 4860 MPQ: 1
|
IC GATE DRIVER HI LOW SIDE 14SOP
|
- | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 1.2V，2.5V | 4.5A，4.5A | ||
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|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC GATE DVR MONO HI/LO 14DIP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 4.5V，9.5V | 3A，3A |
