- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 54
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
2,690
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-MSOP
|
4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,794
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,908
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-SOIC
|
4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,886
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-MSOP
|
4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,236
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-SOIC
|
4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,710
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-DIP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
2,949
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-DIP
|
4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
4,429
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-MSOP
|
4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,956
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-SOIC
|
4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,701
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,118
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-SOIC
|
4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
2,135
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-MSOP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
1,151
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-SOIC
|
4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
4,289
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
2,688
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-MSOP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
344
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-MSOP
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-DIP
|
4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
641
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-MSOP
|
4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A | ||||
Texas Instruments |
273
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-DIP
|
4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 1V,2V | 4A,4A |