- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 22
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC GATE DVR HALF BRDG 3PH 28SOIC
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Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
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ON Semiconductor |
1,010
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
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|
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ON Semiconductor |
1,010
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
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|
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ON Semiconductor |
948
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
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|
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ON Semiconductor |
40
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
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|
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ON Semiconductor |
40
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
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Monolithic Power Systems Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
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Tape & Reel (TR) | 10 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | N-Channel MOSFET | 80V | 350mA，350mA | ||
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Monolithic Power Systems Inc. |
Enquête
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- |
-
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MOQ: 100 MPQ: 1
|
IC GATE DRIVER
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Tube | 10 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | N-Channel MOSFET | 80V | 350mA，350mA | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
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|
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
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|
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Tape & Reel (TR) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Cut Tape (CT) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
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|
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
|
|
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Tape & Reel (TR) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Cut Tape (CT) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 350mA，650mA |
