- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 86
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
ON Semiconductor |
2,272
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
|
- | - | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | 8ns，7ns | 0.8V，2.7V | 4A，4A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
|
- | - | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (4x4) | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | 8ns，7ns | 0.8V，2.7V | 4A，4A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
|
- | - | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WDFN (4x4) | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | 8ns，7ns | 0.8V，2.7V | 4A，4A |
