- Packaging：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 13
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
Tape & Reel (TR) | μHVIC | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | N-Channel MOSFET | 85ns，40ns | - | 160mA，240mA | ||
|
|
|
Infineon Technologies |
3,470
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
Cut Tape (CT) | μHVIC | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | N-Channel MOSFET | 85ns，40ns | - | 160mA，240mA | ||
|
|
|
Infineon Technologies |
3,470
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
- | μHVIC | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | N-Channel MOSFET | 85ns，40ns | - | 160mA，240mA | ||
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|
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Texas Instruments |
502
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
Tube | - | -40°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 15ns，15ns | 1.2V，2.7V | 4A，4A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 15ns，15ns | 1.2V，2.7V | 4A，4A | ||
|
|
|
Texas Instruments |
6,035
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 15ns，15ns | 1.2V，2.7V | 4A，4A | ||
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|
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Texas Instruments |
6,035
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
- | - | -40°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 15ns，15ns | 1.2V，2.7V | 4A，4A | ||
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ROHM Semiconductor |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOP
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.173"，4.40mm Width) | 8-SOP | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200ns，100ns | 1V，2.6V | 60mA，130mA | ||
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|
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ROHM Semiconductor |
876
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOP
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.173"，4.40mm Width) | 8-SOP | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200ns，100ns | 1V，2.6V | 60mA，130mA | ||
|
|
|
ROHM Semiconductor |
876
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOP
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.173"，4.40mm Width) | 8-SOP | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200ns，100ns | 1V，2.6V | 60mA，130mA | ||
|
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ROHM Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR IGBT/MOSFET
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.173"，4.40mm Width) | 8-SOP | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200ns，100ns | 1V，2.6V | 60mA，130mA | |||
|
|
ROHM Semiconductor |
2,188
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR IGBT/MOSFET
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.173"，4.40mm Width) | 8-SOP | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200ns，100ns | 1V，2.6V | 60mA，130mA | |||
|
|
ROHM Semiconductor |
2,188
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR IGBT/MOSFET
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.173"，4.40mm Width) | 8-SOP | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200ns，100ns | 1V，2.6V | 60mA，130mA |
