- Series：
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- Voltage - Supply：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 20
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
8,992
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | 10 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | 2.5A，2.5A | ||
|
|
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Infineon Technologies |
8,446
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
- | 3.3 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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|
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Infineon Technologies |
8,823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
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- | 3.3 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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|
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Infineon Technologies |
2,077
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER LIMITING 1CHAN 16-SOIC
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- | 0 V ~ 18 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Infineon Technologies |
2,200
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER LIMITING 8-DIP
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- | 0 V ~ 18 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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IXYS-RF |
79
|
3 jours |
-
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MOQ: 1 MPQ: 1
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500V 18A INTEGRATED POWER MOSFET
|
- | 8 V ~ 18 V | 10-SMD，Flat Lead | 10-SMD | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | 3.4ns，1.65ns | 0.8V，3.5V | 95A，95A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 500V 14-DIP
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- | 10 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | 2.5A，2.5A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 175 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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- | 3.3 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 150 MPQ: 1
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IC MOSFET DRIVER LIMITING 8-DIP
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- | 0 V ~ 18 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 25 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
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- | 3.3 V ~ 20 V | 14-DIP (0.300"，7.62mm)，13 Leads | 14-PDIP | Through Hole | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 180 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
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- | 3.3 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 135 MPQ: 1
|
IC MOSFET DRIVER LIMITING 16SOIC
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- | 0 V ~ 18 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 25 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
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- | 3.3 V ~ 20 V | 16-DIP (0.300"，7.62mm)，14 Leads | 16-PDIP | Through Hole | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 160 MPQ: 1
|
IC POWER MODULE 1.6A 500V 11-SIP
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iMOTION | 10 V ~ 20 V | 11-SIP，9 Leads | 11-SIP | Through Hole | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 0.8V，2.9V | - | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 125 MPQ: 1
|
IC DRIVER HIGH/LOW SID 14DIP
|
- | 3.3 V ~ 20 V | 14-DIP (0.300"，7.62mm)，13 Leads | 14-PDIP | Through Hole | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 240 MPQ: 1
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PWR MOD 180W GATE DRIVER 11-SIP
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iMOTION | 10 V ~ 20 V | 11-SIP，9 Leads | 11-SIP | Through Hole | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 0.8V，2.9V | - | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 150 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
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- | 3.3 V ~ 20 V | 16-DIP (0.300"，7.62mm)，14 Leads | 16-PDIP | Through Hole | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 180 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Automotive，AEC-Q100 | 3 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 25ns，15ns | 6V，9.5V | 2.5A，2.5A | ||
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|
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Vishay Siliconix |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
|
IC MOSFET DVR ADAPTIVE PWR 8DIP
|
- | 10.8 V ~ 16.5 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Single | High-Side | 1 | N-Channel MOSFET | 50ns，35ns | - | 1A，1A | ||
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|
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IXYS |
Enquête
|
- |
-
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MOQ: 275 MPQ: 1
|
IC DRVR HALF BRIDGE 2A 14DIP
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- | 10 V ~ 35 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 8ns，7ns | 6V，9.6V | 2A，2A |
