Number of Drivers:
Découvrez les produits 90
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MP18021HQ-A-LF-Z
Monolithic Power Systems Inc.
Enquête
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MOQ: 5000  MPQ: 1
IC GATE DRIVER
Tape & Reel (TR) - 9 V ~ 18 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad 8-QFN (3x3) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 12ns,9ns 1V,2.4V 2.5A,2.5A
MP18024HN-LF-Z
Monolithic Power Systems Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC GATE DRIVER
Tape & Reel (TR) - 9 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 15ns,9ns 1V,2.4V -
ISL89401AR3Z-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC MOSFET DRVR 100V 1.25A 9-DFN
Tape & Reel (TR) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 9-VFDFN Exposed Pad 9-DFN-EP (3x3) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 16ns,16ns 1.4V,2.2V 1.25A,1.25A
ISL89400AR3Z-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC MOSFET DRVR 100V 1.25A 9-DFN
Tape & Reel (TR) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 9-VFDFN Exposed Pad 9-DFN-EP (3x3) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 16ns,16ns 3.7V,7.4V 1.25A,1.25A
ISL89400ABZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC DRVR H-BRDG 100V 1.25A 8SOIC
Tape & Reel (TR) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 16ns,16ns 3.7V,7.4V 1.25A,1.25A
ISL89401ABZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC DRVR H-BRDG 100V 1.25A 8SOIC
Tape & Reel (TR) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 16ns,16ns 1.4V,2.2V 1.25A,1.25A
ISL89400ABZ-TK
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRVR H-BRDG 100V 1.25A 8SOIC
Tape & Reel (TR) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 16ns,16ns 3.7V,7.4V 1.25A,1.25A
ISL89401ABZ-TK
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRVR H-BRDG 100V 1.25A 8SOIC
Tape & Reel (TR) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 16ns,16ns 1.4V,2.2V 1.25A,1.25A
MP18021HQ-A-LF-P
Monolithic Power Systems Inc.
Enquête
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MOQ: 500  MPQ: 1
IC GATE DRIVER
Tape & Reel (TR) - 9 V ~ 18 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad 8-QFN (3x3) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 12ns,9ns 1V,2.4V 2.5A,2.5A
MP1907GQ-P
Monolithic Power Systems Inc.
Enquête
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MOQ: 500  MPQ: 1
IC GATE DRIVER
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-QFN (3x3) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 12ns,9ns 1V,2.4V 2.5A,2.5A
MP18021HN-A-LF
Monolithic Power Systems Inc.
Enquête
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MOQ: 100  MPQ: 1
IC GATE DRIVER
Tube - 9 V ~ 18 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 12ns,9ns 1V,2.4V 2.5A,2.5A
MP18021HN-LF
Monolithic Power Systems Inc.
Enquête
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MOQ: 100  MPQ: 1
IC GATE DRIVER
Tube - 9 V ~ 16 V -40°C ~ 140°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 12ns,9ns 1V,2.4V 2.5A,2.5A
ISL89400AR3Z
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC MOSFET DRVR 100V 1.25A 9-DFN
Tube - 9 V ~ 14 V -40°C ~ 125°C (TJ) 9-VFDFN Exposed Pad 9-DFN-EP (3x3) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 16ns,16ns 3.7V,7.4V 1.25A,1.25A
LM25101BMAX/NOPB
Texas Instruments
Enquête
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MOQ: 2500  MPQ: 1
IC GATE DVR HI/LO SIDE 2A 8SOIC
Tape & Reel (TR) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 570ns,430ns 2.3V,- 2A,2A
LM25101ASDX/NOPB
Texas Instruments
Enquête
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MOQ: 4500  MPQ: 1
IC GATE DVR HI/LO SIDE 10WSON
Tape & Reel (TR) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 430ns,260ns 2.3V,- 3A,3A
ISL89401ABZ
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC DRVR H-BRDG 100V 1.25A 8SOIC
Tube - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 16ns,16ns 1.4V,2.2V 1.25A,1.25A
MP18024HN-LF
Monolithic Power Systems Inc.
Enquête
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MOQ: 100  MPQ: 1
IC GATE DRIVER
Tube - 9 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 15ns,9ns 1V,2.4V -
IR2086STRPBF
Infineon Technologies
Enquête
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MOQ: 2500  MPQ: 1
IC DRIVER FULL BRIDGE 16-SOIC
Tape & Reel (TR) - 9.5 V ~ 15 V -40°C ~ 125°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC RC Input Circuit Synchronous Half-Bridge 4 N-Channel MOSFET 40ns,20ns - 1.2A,1.2A
IR2086STRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER FULL BRIDGE 16-SOIC
Cut Tape (CT) - 9.5 V ~ 15 V -40°C ~ 125°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC RC Input Circuit Synchronous Half-Bridge 4 N-Channel MOSFET 40ns,20ns - 1.2A,1.2A
IR2086STRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER FULL BRIDGE 16-SOIC
- - 9.5 V ~ 15 V -40°C ~ 125°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC RC Input Circuit Synchronous Half-Bridge 4 N-Channel MOSFET 40ns,20ns - 1.2A,1.2A