- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 90
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Monolithic Power Systems Inc. |
Enquête
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- |
-
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MOQ: 5000 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 12ns,9ns | 1V,2.4V | 2.5A,2.5A | ||||
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 15ns,9ns | 1V,2.4V | - | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MOSFET DRVR 100V 1.25A 9-DFN
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 16ns,16ns | 1.4V,2.2V | 1.25A,1.25A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MOSFET DRVR 100V 1.25A 9-DFN
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 16ns,16ns | 3.7V,7.4V | 1.25A,1.25A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR H-BRDG 100V 1.25A 8SOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 16ns,16ns | 3.7V,7.4V | 1.25A,1.25A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR H-BRDG 100V 1.25A 8SOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 16ns,16ns | 1.4V,2.2V | 1.25A,1.25A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRVR H-BRDG 100V 1.25A 8SOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 16ns,16ns | 3.7V,7.4V | 1.25A,1.25A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRVR H-BRDG 100V 1.25A 8SOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 16ns,16ns | 1.4V,2.2V | 1.25A,1.25A | ||||
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 12ns,9ns | 1V,2.4V | 2.5A,2.5A | ||||
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 12ns,9ns | 1V,2.4V | 2.5A,2.5A | ||||
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC GATE DRIVER
|
Tube | - | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 12ns,9ns | 1V,2.4V | 2.5A,2.5A | ||||
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC GATE DRIVER
|
Tube | - | 9 V ~ 16 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 12ns,9ns | 1V,2.4V | 2.5A,2.5A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRVR 100V 1.25A 9-DFN
|
Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 16ns,16ns | 3.7V,7.4V | 1.25A,1.25A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HI/LO SIDE 2A 8SOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 570ns,430ns | 2.3V,- | 2A,2A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 4500 MPQ: 1
|
IC GATE DVR HI/LO SIDE 10WSON
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 430ns,260ns | 2.3V,- | 3A,3A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 980 MPQ: 1
|
IC DRVR H-BRDG 100V 1.25A 8SOIC
|
Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 16ns,16ns | 1.4V,2.2V | 1.25A,1.25A | ||||
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC GATE DRIVER
|
Tube | - | 9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 15ns,9ns | 1V,2.4V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER FULL BRIDGE 16-SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | RC Input Circuit | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 40ns,20ns | - | 1.2A,1.2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL BRIDGE 16-SOIC
|
Cut Tape (CT) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | RC Input Circuit | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 40ns,20ns | - | 1.2A,1.2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL BRIDGE 16-SOIC
|
- | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | RC Input Circuit | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 40ns,20ns | - | 1.2A,1.2A |