Fabricant:
Voltage - Supply:
Supplier Device Package:
Rise / Fall Time (Typ):
Current - Peak Output (Source, Sink):
Découvrez les produits 6
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Gate Type Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
L9856-TR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH SIDE HV 8-SOIC
Tape & Reel (TR) - 4.4 V ~ 6.5 V -55°C ~ 150°C (TJ) 8-SO Inverting N-Channel MOSFET 100ns,100ns 500mA,500mA
L9856-TR-LF
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH SIDE 8SOIC
Tape & Reel (TR) - 4.4 V ~ 6.5 V -55°C ~ 150°C (TJ) 8-SO Inverting N-Channel MOSFET 100ns,100ns 500mA,500mA
L9856-LF
STMicroelectronics
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRIVER HIGH SIDE 8SOIC
Tube - 4.4 V ~ 6.5 V -55°C ~ 150°C (TJ) 8-SO Inverting N-Channel MOSFET 100ns,100ns 500mA,500mA
AUIRS20162STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HIGH SIDE 8SOIC
Tape & Reel (TR) Automotive,AEC-Q100 4.4 V ~ 20 V -55°C ~ 155°C (TJ) 8-SOIC Non-Inverting N-Channel MOSFET 200ns,200ns 250mA,250mA
L9856
STMicroelectronics
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRIVER HIGH SIDE HV 8-SOIC
Tube - 4.4 V ~ 6.5 V -55°C ~ 150°C (TJ) 8-SO Inverting N-Channel MOSFET 100ns,100ns 500mA,500mA
AUIRS20161S
Infineon Technologies
Enquête
-
-
MOQ: 285  MPQ: 1
IC DRVR IGBT/MOSFET 8SOIC
Tube Automotive,AEC-Q100 4.4 V ~ 6.5 V -55°C ~ 150°C (TJ) 8-SOIC Inverting IGBT,N-Channel MOSFET 200ns,200ns 500mA,500mA