Découvrez les produits 49
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
HIP2101IBZT
Renesas Electronics America Inc.
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRDG 100V 8-SOIC
- 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent 10ns,10ns 0.8V,2.2V 2A,2A
HIP2100IBZT
Renesas Electronics America Inc.
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRDG 100V 8-SOIC
- 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent 10ns,10ns 4V,7V 2A,2A
HIP2101EIBZT
Renesas Electronics America Inc.
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRDG 100V 8EPSOIC
- 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent 10ns,10ns 0.8V,2.2V 2A,2A
HIP2101IBZT7A
Renesas Electronics America Inc.
250
3 jours
-
MOQ: 250  MPQ: 1
IC HALF BRIDGE DRIVER 8SOIC
- 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent 10ns,10ns 0.8V,2.2V 2A,2A
ISL78420AVEZ-T7A
Renesas Electronics America Inc.
250
3 jours
-
MOQ: 250  MPQ: 1
IC DRVR HALF BRIDGE 10DFN
Automotive,AEC-Q100 8 V ~ 14 V -55°C ~ 150°C (TJ) 14-TSSOP (0.173",4.40mm Width) Exposed Pad 14-HTSSOP Non-Inverting Synchronous 10ns,10ns 1.8V,4V 2A,2A
HIP2100IBZT7A
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 250  MPQ: 1
IC HALF BRIDGE DRIVER 8SOIC
- 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent 10ns,10ns 4V,7V 2A,2A
ISL2111ARTZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MSFT DVR HALF-BRG 100V 10TDFN
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Non-Inverting Independent 9ns,7.5ns 1.4V,2.2V 3A,4A
ISL2101AABZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR HALF-BRDGE HI FREQ 8SOIC
- 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent 10ns,10ns 1.4V,2.2V 2A,2A
ISL2101AAR3Z-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DVR HALF-BRDG HF 100V 2A 9DFN
- 9 V ~ 14 V -40°C ~ 125°C (TJ) 9-VFDFN Exposed Pad 9-DFN-EP (3x3) Non-Inverting Independent 10ns,10ns 1.4V,2.2V 2A,2A
ISL2100AAR3Z-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DVR HALF-BRDG HF 100V 2A 9DFN
- 9 V ~ 14 V -40°C ~ 125°C (TJ) 9-VFDFN Exposed Pad 9-DFN-EP (3x3) Non-Inverting Independent 10ns,10ns 3.7V,7.4V 2A,2A
HIP2100IRZT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRDG 100V/2A 16-QFN
- 9 V ~ 14 V -55°C ~ 150°C (TJ) 16-VQFN Exposed Pad 16-QFN-EP (5x5) Non-Inverting Independent 10ns,10ns 4V,7V 2A,2A
HIP2101IRZT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRIDGE 100V 16-QFN
- 9 V ~ 14 V -55°C ~ 150°C (TJ) 16-VQFN Exposed Pad 16-QFN-EP (5x5) Non-Inverting Independent 10ns,10ns 0.8V,2.2V 2A,2A
HIP2101IR4ZT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRIDGE 100V 12-DFN
- 9 V ~ 14 V -55°C ~ 150°C (TJ) 12-VFDFN Exposed Pad 12-DFN (4x4) Non-Inverting Independent 10ns,10ns 0.8V,2.2V 2A,2A
HIP2100EIBZT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRDG 100V 8EPSOIC
- 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent 10ns,10ns 4V,7V 2A,2A
ISL2111ABZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 5000  MPQ: 1
IC MSFT DVR HALF-BRG 100V 8-SOIC
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent 9ns,7.5ns 1.4V,2.2V 3A,4A
ISL2111AR4Z-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MSFT DVR HALF-BRG 100V 12-DFN
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 12-VFDFN Exposed Pad 12-DFN (4x4) Non-Inverting Independent 9ns,7.5ns 1.4V,2.2V 3A,4A
ISL2111BR4Z-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MSFT DVR HALF-BRG 100V 8DFN
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad 8-DFN (4x4) Non-Inverting Independent 9ns,7.5ns 1.4V,2.2V 3A,4A
ISL2110ABZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 5000  MPQ: 1
IC MSFT DVR HALF-BRG 100V 8-SOIC
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent 9ns,7.5ns 3.7V,7.4V 3A,4A
ISL2110AR4Z-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MSFT DVR HALF-BRG 100V 12-DFN
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 12-VFDFN Exposed Pad 12-DFN (4x4) Non-Inverting Independent 9ns,7.5ns 3.7V,7.4V 3A,4A
ISL78420AVEZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR HALF BRIDGE 10DFN
Automotive,AEC-Q100 8 V ~ 14 V -55°C ~ 150°C (TJ) 14-TSSOP (0.173",4.40mm Width) Exposed Pad 14-HTSSOP Non-Inverting Synchronous 10ns,10ns 1.8V,4V 2A,2A