- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,132
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
Enquête
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-
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MOQ: 1 MPQ: 1
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IC GATE DVR LOW DUAL 2A HS 8MLP
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- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC GATE DRIVER DUAL 4A 8-MLP
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 5A，5A | |||
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ON Semiconductor |
Enquête
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-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER DUAL 4A 8-MLP
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Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 5A，5A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER DUAL 4A 8-MLP
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- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 5A，5A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR HS 5A DUAL 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 8ns，8ns | 1.2V，1.8V | 5A，5A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC MOSFET DVR HS 5A DUAL 8MSOP
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Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 8ns，8ns | 1.2V，1.8V | 5A，5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR 1.5A DUAL 8MSOP
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | 0.8V，2V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 1.5A DUAL 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | 0.8V，2V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 1.5A DUAL 8TDFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | 0.8V，2V | 1.5A，1.5A | |||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC GATE DVR 7.6A LOSIDE SOT23-6
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Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 480 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DFN
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 480 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DFN
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 480 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DFN
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 480 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DFN
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
43
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET 3A DUAL 16-SOIC
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC GATE DVR LOW DUAL 2A HS 8SOIC
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Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A |
