- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 10
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | Single | 1 | 48ns，35ns | - | 10A，10A | ||
|
|
|
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | Single | 1 | 48ns，35ns | - | 10A，10A | ||
|
|
|
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | Single | 1 | 48ns，35ns | - | 10A，10A | ||
|
|
|
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Tape & Reel (TR) | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | 2 | 40ns，25ns | 2V，4.25V | 4A，4A | ||
|
|
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Maxim Integrated |
4,800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Cut Tape (CT) | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | 2 | 40ns，25ns | 2V，4.25V | 4A，4A | ||
|
|
|
Maxim Integrated |
4,800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
- | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | 2 | 40ns，25ns | 2V，4.25V | 4A，4A | ||
|
|
|
Maxim Integrated |
118
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8UMAX
|
Tube | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Inverting，Non-Inverting | Independent | 2 | 40ns，25ns | 2V，4.25V | 4A，4A | ||
|
|
|
Maxim Integrated |
114
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
Tube | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | 2 | 40ns，25ns | 2V，4.25V | 4A，4A | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8UMAX
|
Tape & Reel (TR) | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Inverting，Non-Inverting | Independent | 2 | 40ns，25ns | 2V，4.25V | 4A，4A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
Tape & Reel (TR) | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | 2 | 40ns，25ns | 2V，4.25V | 4A，4A |
