- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 21
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
UCC27712QDRQ1
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | - | Synchronous | High-Side or Low-Side | 2 | 700V | 16ns,10ns | 0.8V,2.4V | 1.8A,2.8A | ||||
Texas Instruments |
2,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
UCC27712QDRQ1
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | - | Synchronous | High-Side or Low-Side | 2 | 700V | 16ns,10ns | 0.8V,2.4V | 1.8A,2.8A | ||||
Texas Instruments |
2,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
UCC27712QDRQ1
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | - | Synchronous | High-Side or Low-Side | 2 | 700V | 16ns,10ns | 0.8V,2.4V | 1.8A,2.8A | ||||
Texas Instruments |
963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
Tube | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | - | Synchronous | High-Side or Low-Side | 2 | 700V | 16ns,10ns | 0.8V,2.4V | 1.8A,2.8A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Non-Inverting | 3-Phase | Half-Bridge | 6 | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28SOIC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Non-Inverting | 3-Phase | Half-Bridge | 6 | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 380 MPQ: 1
|
IC DRIVER LOW SIDE DUAL 8SOIC
|
Tube | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | - | 15ns,25ns | 0.8V,2.7V | 2.3A,3.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 380 MPQ: 1
|
IC DRIVER LOW SIDE DUAL 8SOIC
|
Tube | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | - | 25ns,25ns | 0.8V,2.5V | 2.3A,3.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 380 MPQ: 1
|
IC DRIVER LOW SIDE DUAL 8SOIC
|
Tube | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | - | 15ns,25ns | 0.8V,2.7V | 2.3A,3.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 252 MPQ: 1
|
IC DRVR IGBT/MOSFET 20SOIC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Non-Inverting | 3-Phase | Half-Bridge | 6 | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 380 MPQ: 1
|
IC DRVR LSOW SIDE DUAL 8SOIC
|
Tube | 4.8 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | - | 15ns,25ns | 0.8V,2.7V | 2.3A,3.3A | ||||
Microchip Technology |
2,984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Strip | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | - | 11ns,11ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
954
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | - | 11ns,11ns | 0.8V,2.4V | 3A,3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 81 MPQ: 1
|
IC DRVR BRIDGE 3-PHASE 44PLCC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Non-Inverting | 3-Phase | Half-Bridge | 6 | 600V | 80ns,40ns | 0.8V,2.2V | 250mA,500mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | - | 11ns,11ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
- | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | - | 11ns,11ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting,Non-Inverting | Independent | Low-Side | 2 | - | 11ns,11ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
- | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting,Non-Inverting | Independent | Low-Side | 2 | - | 11ns,11ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | - | 11ns,11ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
- | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | - | 11ns,11ns | 0.8V,2.4V | 3A,3A |