Découvrez les produits 21
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
UCC27712QDRQ1
Texas Instruments
Enquête
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MOQ: 2500  MPQ: 1
UCC27712QDRQ1
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Synchronous High-Side or Low-Side 2 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712QDRQ1
Texas Instruments
2,201
3 jours
-
MOQ: 1  MPQ: 1
UCC27712QDRQ1
Cut Tape (CT) 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Synchronous High-Side or Low-Side 2 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712QDRQ1
Texas Instruments
2,201
3 jours
-
MOQ: 1  MPQ: 1
UCC27712QDRQ1
- 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Synchronous High-Side or Low-Side 2 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
UCC27712QDQ1
Texas Instruments
963
3 jours
-
MOQ: 1  MPQ: 1
700V GATE DRIVER
Tube 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Synchronous High-Side or Low-Side 2 700V 16ns,10ns 0.8V,2.4V 1.8A,2.8A
AUIRS2336STR
Infineon Technologies
Enquête
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MOQ: 1000  MPQ: 1
IC GATE DRIVER HV 3PHASE 28SOIC
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Non-Inverting 3-Phase Half-Bridge 6 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
AUIRS2336S
Infineon Technologies
Enquête
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MOQ: 100  MPQ: 1
IC GATE DRIVER HV 3PHASE 28SOIC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Non-Inverting 3-Phase Half-Bridge 6 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
AUIRS4426S
Infineon Technologies
Enquête
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-
MOQ: 380  MPQ: 1
IC DRIVER LOW SIDE DUAL 8SOIC
Tube 6 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Independent Low-Side 2 - 15ns,25ns 0.8V,2.7V 2.3A,3.3A
AUIRS4427S
Infineon Technologies
Enquête
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MOQ: 380  MPQ: 1
IC DRIVER LOW SIDE DUAL 8SOIC
Tube 6 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Low-Side 2 - 25ns,25ns 0.8V,2.5V 2.3A,3.3A
AUIRS4428S
Infineon Technologies
Enquête
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MOQ: 380  MPQ: 1
IC DRIVER LOW SIDE DUAL 8SOIC
Tube 6 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting Independent Low-Side 2 - 15ns,25ns 0.8V,2.7V 2.3A,3.3A
AUIRS2334S
Infineon Technologies
Enquête
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MOQ: 252  MPQ: 1
IC DRVR IGBT/MOSFET 20SOIC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Non-Inverting 3-Phase Half-Bridge 6 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
AUIRS44261S
Infineon Technologies
Enquête
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MOQ: 380  MPQ: 1
IC DRVR LSOW SIDE DUAL 8SOIC
Tube 4.8 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Independent Low-Side 2 - 15ns,25ns 0.8V,2.7V 2.3A,3.3A
MAQ4124YME-VAO
Microchip Technology
2,984
3 jours
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MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
Strip 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Low-Side 2 - 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4123YME-TRVAO
Microchip Technology
954
3 jours
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MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
Cut Tape (CT) 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Inverting Independent Low-Side 2 - 11ns,11ns 0.8V,2.4V 3A,3A
AUIRS2332J
Infineon Technologies
Enquête
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MOQ: 81  MPQ: 1
IC DRVR BRIDGE 3-PHASE 44PLCC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Non-Inverting 3-Phase Half-Bridge 6 600V 80ns,40ns 0.8V,2.2V 250mA,500mA
MAQ4123YME-TRVAO
Microchip Technology
Enquête
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MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
Cut Tape (CT) 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Inverting Independent Low-Side 2 - 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4123YME-TRVAO
Microchip Technology
Enquête
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MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
- 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Inverting Independent Low-Side 2 - 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4125YME-TRVAO
Microchip Technology
Enquête
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MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
Cut Tape (CT) 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Inverting,Non-Inverting Independent Low-Side 2 - 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4125YME-TRVAO
Microchip Technology
Enquête
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MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
- 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Inverting,Non-Inverting Independent Low-Side 2 - 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4124YME-TRVAO
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
Cut Tape (CT) 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Low-Side 2 - 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4124YME-TRVAO
Microchip Technology
Enquête
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MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
- 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Low-Side 2 - 11ns,11ns 0.8V,2.4V 3A,3A