Découvrez les produits 44
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Input Type Driven Configuration High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX17602ATA+
Maxim Integrated
2,180
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
Strip 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad Inverting,Non-Inverting Low-Side - 40ns,25ns 0.8V,2.1V 4A,4A
MAX17601ATA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
Tape & Reel (TR) 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad Non-Inverting Low-Side - 40ns,25ns 0.8V,2.1V 4A,4A
MAX17601ATA+T
Maxim Integrated
1,390
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
Cut Tape (CT) 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad Non-Inverting Low-Side - 40ns,25ns 0.8V,2.1V 4A,4A
MAX17601ATA+T
Maxim Integrated
1,390
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
- 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad Non-Inverting Low-Side - 40ns,25ns 0.8V,2.1V 4A,4A
ISL89164FRTBZ
Renesas Electronics America Inc.
2,429
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
Tube 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Inverting Low-Side - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89163FRTAZ
Renesas Electronics America Inc.
1,135
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
Tube 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Non-Inverting Low-Side - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89165FRTAZ
Renesas Electronics America Inc.
324
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
Tube 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Inverting,Non-Inverting Low-Side - 20ns,20ns 1.22V,2.08V 6A,6A
HIP2103FRTAAZ-T7A
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 250  MPQ: 1
IC DRVR HALF BRIDGE 60V 8-DFN
Tape & Reel (TR) 4.5 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Non-Inverting Half-Bridge 60V 8ns,2ns 1.63V,2.06V 1A,1A
HIP2103FRTAAZ-T7A
Renesas Electronics America Inc.
181
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR HALF BRIDGE 60V 8-DFN
Cut Tape (CT) 4.5 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Non-Inverting Half-Bridge 60V 8ns,2ns 1.63V,2.06V 1A,1A
HIP2103FRTAAZ-T7A
Renesas Electronics America Inc.
181
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR HALF BRIDGE 60V 8-DFN
- 4.5 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Non-Inverting Half-Bridge 60V 8ns,2ns 1.63V,2.06V 1A,1A
MAX17602ATA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8TDFN
Tape & Reel (TR) 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad Inverting,Non-Inverting Low-Side - 40ns,25ns 0.8V,2.1V 4A,4A
HIP2103FRTAAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRIDGE 60V 8-DFN
Tape & Reel (TR) 4.5 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Non-Inverting Half-Bridge 60V 8ns,2ns 1.63V,2.06V 1A,1A
HIP2103FRTAAZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRVR HALF BRIDGE 60V 8-DFN
Tube 4.5 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Non-Inverting Half-Bridge 60V 8ns,2ns 1.63V,2.06V 1A,1A
ISL89163FRTAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
Tape & Reel (TR) 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Non-Inverting Low-Side - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89163FRTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
Tape & Reel (TR) 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Non-Inverting Low-Side - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89164FRTAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
Tape & Reel (TR) 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Inverting Low-Side - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89164FRTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
Tape & Reel (TR) 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Inverting Low-Side - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89165FRTAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
Tape & Reel (TR) 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Inverting,Non-Inverting Low-Side - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89165FRTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
Tape & Reel (TR) 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Inverting,Non-Inverting Low-Side - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89163FRTBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
Tube 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad Non-Inverting Low-Side - 20ns,20ns 1.85V,3.15V 6A,6A