- Packaging:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 15
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
Tape & Reel (TR) | μHVIC | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | 100V | 85ns,40ns | 0.8V,2.2V | 160mA,240mA | ||||
Infineon Technologies |
4,783
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
Cut Tape (CT) | μHVIC | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | 100V | 85ns,40ns | 0.8V,2.2V | 160mA,240mA | ||||
Infineon Technologies |
4,783
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
- | μHVIC | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | 100V | 85ns,40ns | 0.8V,2.2V | 160mA,240mA | ||||
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
Tape & Reel (TR) | μHVIC | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | 600V | 85ns,40ns | - | 160mA,240mA | ||||
Infineon Technologies |
3,470
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
Cut Tape (CT) | μHVIC | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | 600V | 85ns,40ns | - | 160mA,240mA | ||||
Infineon Technologies |
3,470
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
- | μHVIC | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | 600V | 85ns,40ns | - | 160mA,240mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 200V SOT23
|
Tape & Reel (TR) | μHVIC | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | 200V | 85ns,40ns | 0.8V,2.2V | 160mA,240mA | ||||
Infineon Technologies |
2,505
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 200V SOT23
|
Cut Tape (CT) | μHVIC | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | 200V | 85ns,40ns | 0.8V,2.2V | 160mA,240mA | ||||
Infineon Technologies |
2,505
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 200V SOT23
|
- | μHVIC | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | 200V | 85ns,40ns | 0.8V,2.2V | 160mA,240mA | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH SIDE HV 8-SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Single | High-Side | 1 | 300V | 100ns,100ns | - | 500mA,500mA | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRIVER HIGH SIDE 8SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Single | High-Side | 1 | 300V | 100ns,100ns | - | 500mA,500mA | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH SIDE 8SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Single | High-Side | 1 | 300V | 100ns,100ns | - | 500mA,500mA | ||||
ROHM Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR IGBT/MOSFET
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.173",4.40mm Width) | 8-SOP | Independent | Half-Bridge | 2 | 600V | 200ns,100ns | 1V,2.6V | 60mA,130mA | ||||
ROHM Semiconductor |
2,188
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR IGBT/MOSFET
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.173",4.40mm Width) | 8-SOP | Independent | Half-Bridge | 2 | 600V | 200ns,100ns | 1V,2.6V | 60mA,130mA | ||||
ROHM Semiconductor |
2,188
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR IGBT/MOSFET
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.173",4.40mm Width) | 8-SOP | Independent | Half-Bridge | 2 | 600V | 200ns,100ns | 1V,2.6V | 60mA,130mA |