- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Conditions sélectionnées:
Découvrez les produits 7
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
3,476
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE 8-SOIC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Half-Bridge | 25ns，15ns | 1A，1A | ||
|
|
|
Infineon Technologies |
41
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 8DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Half-Bridge | 25ns，15ns | 1A，1A | ||
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
|
Tape & Reel (TR) | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | 8ns，7ns | 4A，4A | |||
|
|
ON Semiconductor |
2,272
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
|
Cut Tape (CT) | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | 8ns，7ns | 4A，4A | |||
|
|
ON Semiconductor |
2,272
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
|
- | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | 8ns，7ns | 4A，4A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
|
- | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (4x4) | Surface Mount | Non-Inverting | High-Side or Low-Side | 8ns，7ns | 4A，4A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
|
- | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WDFN (4x4) | Surface Mount | Non-Inverting | High-Side or Low-Side | 8ns，7ns | 4A，4A |
