Découvrez les produits 11
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Number of Drivers Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
NCD5700DR2G
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
HIGH CURRENT IGBT GATE DRIVER
Tape & Reel (TR) - 20V -40°C ~ 150°C (TJ) - Synchronous High-Side or Low-Side - 18ns,19ns - 7.8A,6.8A
NCD5700DR2G
ON Semiconductor
2,483
3 jours
-
MOQ: 1  MPQ: 1
HIGH CURRENT IGBT GATE DRIVER
Cut Tape (CT) - 20V -40°C ~ 150°C (TJ) - Synchronous High-Side or Low-Side - 18ns,19ns - 7.8A,6.8A
NCD5700DR2G
ON Semiconductor
2,483
3 jours
-
MOQ: 1  MPQ: 1
HIGH CURRENT IGBT GATE DRIVER
- - 20V -40°C ~ 150°C (TJ) - Synchronous High-Side or Low-Side - 18ns,19ns - 7.8A,6.8A
NCV5700DR2G
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IGBT GATE DRIVER
Tape & Reel (TR) Automotive,AEC-Q100 20V -40°C ~ 125°C (TA) - Synchronous High-Side or Low-Side - 9.2ns,7.9ns 0.75V,4.3V 7.8A,6.8A
NCV5700DR2G
ON Semiconductor
2,107
3 jours
-
MOQ: 1  MPQ: 1
IGBT GATE DRIVER
Cut Tape (CT) Automotive,AEC-Q100 20V -40°C ~ 125°C (TA) - Synchronous High-Side or Low-Side - 9.2ns,7.9ns 0.75V,4.3V 7.8A,6.8A
NCV5700DR2G
ON Semiconductor
2,107
3 jours
-
MOQ: 1  MPQ: 1
IGBT GATE DRIVER
- Automotive,AEC-Q100 20V -40°C ~ 125°C (TA) - Synchronous High-Side or Low-Side - 9.2ns,7.9ns 0.75V,4.3V 7.8A,6.8A
NCD5702DR2G
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
METAL SPIN OF NCD5702. HI
Tape & Reel (TR) - 5.5V -40°C ~ 125°C (TA) Inverting Independent Half-Bridge 1 9.2ns,7.9ns 0.75V,4.3V 7.8A,6.8A
NCD5702DR2G
ON Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
METAL SPIN OF NCD5702. HI
Cut Tape (CT) - 5.5V -40°C ~ 125°C (TA) Inverting Independent Half-Bridge 1 9.2ns,7.9ns 0.75V,4.3V 7.8A,6.8A
NCD5702DR2G
ON Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
METAL SPIN OF NCD5702. HI
- - 5.5V -40°C ~ 125°C (TA) Inverting Independent Half-Bridge 1 9.2ns,7.9ns 0.75V,4.3V 7.8A,6.8A
IX2204NE
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
IC IGBT GATE DVR DUAL 16SOIC
Tube - -10 V ~ 25 V -55°C ~ 150°C (TJ) Non-Inverting Independent Low-Side 2 -,8ns 0.8V,2V 2A,4A
IX2204NETR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC IGBT GATE DVR DUAL 16SOIC
Tape & Reel (TR) - -10 V ~ 25 V -55°C ~ 150°C (TJ) Non-Inverting Independent Low-Side 2 -,8ns 0.8V,2V 2A,4A