- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 348
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
1,010
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
1,010
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
HV GATE DRIVER SO-28
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SO | Surface Mount | Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 90ns,35ns | 0.8V,2.4V | 200mA,350mA | ||||
Diodes Incorporated |
1,204
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HV GATE DRIVER SO-28
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SO | Surface Mount | Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 90ns,35ns | 0.8V,2.4V | 200mA,350mA | ||||
Diodes Incorporated |
1,204
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HV GATE DRIVER SO-28
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SO | Surface Mount | Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 90ns,35ns | 0.8V,2.4V | 200mA,350mA | ||||
Infineon Technologies |
1,273
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 28-DIP
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Through Hole | Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel MOSFET | 1200V | 90ns,40ns | 0.8V,2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR 600V 3PHASE 28TSSOP
|
Tape & Reel (TR) | EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173",4.40mm Width) | PG-TSSOP-28 | Surface Mount | Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
1,843
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 600V 3PHASE 28TSSOP
|
Cut Tape (CT) | EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173",4.40mm Width) | PG-TSSOP-28 | Surface Mount | Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
1,843
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 600V 3PHASE 28TSSOP
|
- | EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173",4.40mm Width) | PG-TSSOP-28 | Surface Mount | Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-TSSOP-28 | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
Cut Tape (CT) | EiceDriver | 10 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-TSSOP-28 | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
- | EiceDriver | 10 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-TSSOP-28 | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28DSO
|
Tape & Reel (TR) | EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-DSO-28-17 | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel,P-Channel MOSFET | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28DSO
|
Cut Tape (CT) | EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-DSO-28-17 | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel,P-Channel MOSFET | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28DSO
|
- | EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-DSO-28-17 | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel,P-Channel MOSFET | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
Tape & Reel (TR) | EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-DSO-28 | Surface Mount | Inverting | 3-Phase | Half-Bridge | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - |