Découvrez les produits 348
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR2130
Infineon Technologies
Enquête
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MOQ: 65  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Through Hole Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IR2133J
Infineon Technologies
Enquête
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MOQ: 54  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 44-PLCC
Tube - 10 V ~ 20 V 125°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 90ns,40ns 0.8V,2.2V 250mA,500mA
IR2136
Infineon Technologies
Enquête
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MOQ: 104  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Through Hole Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR2233J
Infineon Technologies
Enquête
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MOQ: 27  MPQ: 1
IC DRIVER 3-PHASE BRIDGE 44-PLCC
Tube - 10 V ~ 20 V 125°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 1200V 90ns,40ns 0.8V,2V 250mA,500mA
IR2130J
Infineon Technologies
Enquête
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MOQ: 54  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 44-PLCC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IR2130S
Infineon Technologies
Enquête
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MOQ: 75  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IR2131
Infineon Technologies
Enquête
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MOQ: 65  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Through Hole Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.2V 250mA,500mA
IR2131J
Infineon Technologies
Enquête
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MOQ: 54  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 44-PLCC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.2V 250mA,500mA
IR2131S
Infineon Technologies
Enquête
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MOQ: 75  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.2V 250mA,500mA
IR2132
Infineon Technologies
Enquête
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MOQ: 65  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Through Hole Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
98-0036
Infineon Technologies
Enquête
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MOQ: 54  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 44-PLCC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IR2132S
Infineon Technologies
Enquête
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MOQ: 75  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IR2133S
Infineon Technologies
Enquête
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MOQ: 75  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-SOIC
Tube - 10 V ~ 20 V 125°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 90ns,40ns 0.8V,2.2V 250mA,500mA
IR2135
Infineon Technologies
Enquête
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MOQ: 52  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube - 10 V ~ 20 V 125°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Through Hole Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 90ns,40ns 0.8V,2.2V 250mA,500mA
IR2135J
Infineon Technologies
Enquête
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MOQ: 54  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 44-PLCC
Tube - 10 V ~ 20 V 125°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 90ns,40ns 0.8V,2.2V 250mA,500mA
IR2135S
Infineon Technologies
Enquête
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MOQ: 75  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-SOIC
Tube - 10 V ~ 20 V 125°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 90ns,40ns 0.8V,2.2V 250mA,500mA
IR21362
Infineon Technologies
Enquête
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MOQ: 104  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Through Hole Inverting,Non-Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR21362J
Infineon Technologies
Enquête
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MOQ: 117  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 44-PLCC
Tube - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting,Non-Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR21362S
Infineon Technologies
Enquête
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MOQ: 100  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-SOIC
Tube - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting,Non-Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR2136J
Infineon Technologies
Enquête
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MOQ: 108  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 44-PLCC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA