Découvrez les produits 28
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Channel Type Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
TPIC44H01DA
Texas Instruments
2,137
3 jours
-
MOQ: 1  MPQ: 1
IC 4-CH HIGH-SIDE DRVR 32-TSSOP
Tube 4.5 V ~ 5.5 V -40°C ~ 150°C (TJ) 32-TSSOP (0.240",6.10mm Width) 32-TSSOP Surface Mount Independent N-Channel MOSFET - - -
MAX620CWN+
Maxim Integrated
135
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR MOSFET QUAD 18-SOIC
Tube 4.5 V ~ 16.5 V 0°C ~ 70°C (TA) 18-SOIC (0.295",7.50mm Width) 18-SOIC Surface Mount Independent N-Channel MOSFET 1.7μs,2.5μs 0.8V,2.4V -
MAX620CPN+
Maxim Integrated
61
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR MOSFET QUAD 18-DIP
Tube 4.5 V ~ 16.5 V 0°C ~ 70°C (TA) 18-DIP (0.300",7.62mm) 18-PDIP Through Hole Independent N-Channel MOSFET 1.7μs,2.5μs 0.8V,2.4V -
TPIC44H01DAR
Texas Instruments
Enquête
-
-
MOQ: 2000  MPQ: 1
IC 4-CH HIGH-SIDE DRVR 32-TSSOP
Tape & Reel (TR) 4.5 V ~ 5.5 V -40°C ~ 150°C (TJ) 32-TSSOP (0.240",6.10mm Width) 32-TSSOP Surface Mount Independent N-Channel MOSFET - - -
TPIC44H01DAG4
Texas Instruments
Enquête
-
-
MOQ: 184  MPQ: 1
IC 4-CH HIGH-SIDE DRVR 32-TSSOP
Tube 4.5 V ~ 5.5 V -40°C ~ 150°C (TJ) 32-TSSOP (0.240",6.10mm Width) 32-TSSOP Surface Mount Independent N-Channel MOSFET - - -
MAX620EWN+
Maxim Integrated
Enquête
-
-
MOQ: 80  MPQ: 1
IC DRVR MOSFET QUAD 18-SOIC
Tube 4.5 V ~ 16.5 V -40°C ~ 85°C (TA) 18-SOIC (0.295",7.50mm Width) 18-SOIC Surface Mount Independent N-Channel MOSFET 1.7μs,2.5μs 0.8V,2.4V -
LMD18400N/NOPB
Texas Instruments
Enquête
-
-
MOQ: 54  MPQ: 1
IC DRIVER QUAD HI SIDE 20-DIP
Tube 7 V ~ 28 V -25°C ~ 150°C (TJ) 20-DIP (0.300",7.62mm) 20-DIP Through Hole Independent N-Channel MOSFET - 0.8V,2V 3A,3A
MAX621CPN
Maxim Integrated
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DVR MOSFET QUAD HI-SIDE 18DIP
Tube 4.5 V ~ 16.5 V 0°C ~ 70°C (TA) 18-DIP (0.300",7.62mm) 18-PDIP Through Hole Independent N-Channel MOSFET 1.7μs,2.5μs 0.8V,2.4V -
MAX620CPN
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC DVR QUAD HISIDE MOSFET 18-DIP
Tube 4.5 V ~ 16.5 V 0°C ~ 70°C (TA) 18-DIP (0.300",7.62mm) 18-PDIP Through Hole Independent N-Channel MOSFET 1.7μs,2.5μs 0.8V,2.4V -
MAX620CWN
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC DVR QUAD HISIDE MOSFET 18SOIC
Tube 4.5 V ~ 16.5 V 0°C ~ 70°C (TA) 18-SOIC (0.295",7.50mm Width) 18-SOIC Surface Mount Independent N-Channel MOSFET 1.7μs,2.5μs 0.8V,2.4V -
MAX620EPN
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC DVR QUAD HISIDE MOSFET 18-DIP
Tube 4.5 V ~ 16.5 V -40°C ~ 85°C (TA) 18-DIP (0.300",7.62mm) 18-PDIP Through Hole Independent N-Channel MOSFET 1.7μs,2.5μs 0.8V,2.4V -
MAX620EWN
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC DVR QUAD HISIDE MOSFET 18SOIC
Tube 4.5 V ~ 16.5 V -40°C ~ 85°C (TA) 18-SOIC (0.295",7.50mm Width) 18-SOIC Surface Mount Independent N-Channel MOSFET 1.7μs,2.5μs 0.8V,2.4V -
FZL4146GGEGHUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER CIRCUIT QUAD PDSO-20-7
Tape & Reel (TR) 4.5 V ~ 40 V -25°C ~ 125°C (TJ) 20-SOIC (0.295",7.50mm Width) P-DSO-20-7 Surface Mount Synchronous P-Channel MOSFET - 0.7V,2.4V -
MAX620EWN+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC DRVR MOSFET QUAD 18-SOIC
Tape & Reel (TR) 4.5 V ~ 16.5 V -40°C ~ 85°C (TA) 18-SOIC (0.295",7.50mm Width) 18-SOIC Surface Mount Independent N-Channel MOSFET 1.7μs,2.5μs 0.8V,2.4V -
MAX620CWN+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC DRVR MOSFET QUAD 18-SOIC
Tape & Reel (TR) 4.5 V ~ 16.5 V 0°C ~ 70°C (TA) 18-SOIC (0.295",7.50mm Width) 18-SOIC Surface Mount Independent N-Channel MOSFET 1.7μs,2.5μs 0.8V,2.4V -
TPIC44H01DARG4
Texas Instruments
Enquête
-
-
MOQ: 2000  MPQ: 1
IC 4-CH HIGH-SIDE DRVR 32-TSSOP
Tape & Reel (TR) 4.5 V ~ 5.5 V -40°C ~ 150°C (TJ) 32-TSSOP (0.240",6.10mm Width) 32-TSSOP Surface Mount Independent N-Channel MOSFET - - -
LMD18400N
Texas Instruments
Enquête
-
-
MOQ: 36  MPQ: 1
IC DRIVER QUAD HI SIDE 20-DIP
Tube 7 V ~ 28 V -25°C ~ 150°C (TJ) 20-DIP (0.300",7.62mm) 20-DIP Through Hole Independent N-Channel MOSFET - 0.8V,2V 3A,3A
LT1161CSW#PBF
Linear Technology/Analog Devices
204
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER N-CH QUAD20SOIC
Tube 8 V ~ 48 V 0°C ~ 125°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Surface Mount Independent N-Channel MOSFET - 0.8V,2V -
LT1161ISW#PBF
Linear Technology/Analog Devices
7,154
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER N-CH QUAD20SOIC
Tube 8 V ~ 48 V -40°C ~ 150°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Surface Mount Independent N-Channel MOSFET - 0.8V,2V -
LT1161CN#PBF
Linear Technology/Analog Devices
377
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER N-CH QUAD 20DIP
Tube 8 V ~ 48 V 0°C ~ 125°C (TJ) 20-DIP (0.300",7.62mm) 20-PDIP Through Hole Independent N-Channel MOSFET - 0.8V,2V -