- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 32
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
|
Renesas Electronics America Inc. |
9,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Tape & Reel (TR) | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
9,825
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Cut Tape (CT) | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
9,825
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Tape & Reel (TR) | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
3,101
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Cut Tape (CT) | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
3,101
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
- | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
2,362
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20SOIC
|
Tube | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
NXP USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
Tape & Reel (TR) | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 55V | 80ns，80ns | 0.8V，2V | 1A，1A | ||
|
|
|
NXP USA Inc. |
11,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
Cut Tape (CT) | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 55V | 80ns，80ns | 0.8V，2V | 1A，1A | ||
|
|
|
NXP USA Inc. |
11,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
- | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 55V | 80ns，80ns | 0.8V，2V | 1A，1A | ||
|
|
|
Renesas Electronics America Inc. |
1,186
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL-BRIDGE 20-SOIC
|
Tube | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
374
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DRVR 60V/2.5A HF 20-SOIC
|
Tube | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting，Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 75V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC FET DRVR 60V/2.5A HF 20-SOIC
|
Tape & Reel (TR) | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting，Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 75V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 760 MPQ: 1
|
IC DRIVER FULL-BRIDGE 20-SOIC
|
Tube | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 760 MPQ: 1
|
IC DRIVER FULL-BRIDGE 20-SOIC
|
Tube | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20-SOIC
|
Tape & Reel (TR) | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 55V | 80ns，80ns | 0.8V，2V | 1A，1A | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20-SOIC
|
Cut Tape (CT) | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 55V | 80ns，80ns | 0.8V，2V | 1A，1A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 152 MPQ: 1
|
IC DRIVER MOSFET QUAD HS 20-SOIC
|
Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Half-Bridge | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET QUAD HS 20-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Half-Bridge | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 152 MPQ: 1
|
IC DRIVER MOSFET QUAD HS 20-SOIC
|
Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Half-Bridge | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A |
