- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 483
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
4,778
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL MOSFET DRIVER 8-DIP
|
Tube | - | 4.75 V ~ 5.25 V,4.75 V ~ 24 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Synchronous | 2 | N-Channel MOSFET | - | - | 0.8V,2V | 500mA,500mA | ||||
Maxim Integrated |
952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting,Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
2,677
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N-CH 14A LO SIDE TO-220-5
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Non-Inverting | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,18ns | 0.8V,3V | 14A,14A | ||||
IXYS Integrated Circuits Division |
1,427
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Non-Inverting | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,3.5V | 30A,30A | ||||
Texas Instruments |
5,125
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPL MOSFET DRVR TO-220-5
|
Tube | - | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Inverting,Non-Inverting | Single | 1 | IGBT,N-Channel MOSFET | - | 85ns,85ns | 0.8V,2V | 6A,6A | ||||
Texas Instruments |
2,637
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT PWR DRIVER 16-DIP
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-DIP (0.300",7.62mm) | 16-PDIP | Inverting,Non-Inverting | Independent | 2 | N-Channel MOSFET | - | 40ns,40ns | 0.8V,2.2V | 1.5A,1.5A | ||||
Texas Instruments |
3,014
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INVERT PWR DRV 8DIP
|
Tube | - | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2V | 3A,3A | ||||
Powerex Inc. |
1,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR FOR IGBT MOD
|
Bulk | - | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module,12 Leads | Module | Non-Inverting | Single | 1 | IGBT | - | 500ns,300ns | - | 2A,2A | ||||
Powerex Inc. |
2,246
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DVR/DC-DC CONV 12A
|
Bulk | - | 14.2 V ~ 15.8 V | -20°C ~ 60°C (TA) | 21-SIP Module | Module | Non-Inverting | Single | 1 | IGBT | - | 300ns,300ns | - | 12A,12A | ||||
Texas Instruments |
14,018
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRIVER 8-DIP
|
Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
7,532
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRIVER 8-DIP
|
Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
6,078
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRIVER 8-DIP
|
Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
3,139
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRIVER 8-DIP
|
Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | 2 | - | - | 50ns,90ns | 0.8V,2V | 500mA,500mA | ||||
IXYS Integrated Circuits Division |
2,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-DIP
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-DIP | Non-Inverting | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
1,461
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL NONINV 8DIP
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm),6 Leads | 8-DIP | Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
Texas Instruments |
2,876
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | - | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
Texas Instruments |
3,794
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-DIP
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting,Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
4,512
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Synchronous | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | 2A,2A | ||||
Infineon Technologies |
2,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8DIP
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | - | 15ns,10ns | 0.8V,2.7V | 2.3A,3.3A | ||||
IXYS Integrated Circuits Division |
1,719
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DVR ULT FAST 14A 8-DIP
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-DIP | Non-Inverting | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,18ns | 0.8V,3V | 14A,14A |