- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 64
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
2,677
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N-CH 14A LO SIDE TO-220-5
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 25ns,18ns | 0.8V,3V | 14A,14A | ||||
IXYS Integrated Circuits Division |
1,427
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | 0.8V,3.5V | 30A,30A | ||||
Texas Instruments |
5,125
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPL MOSFET DRVR TO-220-5
|
Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | Inverting,Non-Inverting | IGBT,N-Channel MOSFET | 85ns,85ns | 0.8V,2V | 6A,6A | ||||
IXYS Integrated Circuits Division |
631
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A DUAL HS TO220-5
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
Texas Instruments |
988
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH CURRENT FET DRVR TO220-5
|
Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | Inverting,Non-Inverting | IGBT,N-Channel MOSFET | 85ns,85ns | 0.8V,2V | 6A,6A | ||||
Texas Instruments |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH SID POWER DRIVER TO220-5
|
Tube | 5 V ~ 40 V | 0°C ~ 70°C (TA) | TO-220-5 | Inverting,Non-Inverting | N-Channel MOSFET | 60ns,60ns | 0.8V,2.2V | 2A,2A | ||||
Texas Instruments |
561
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT PWR DRVR TO-220-5
|
Tube | 5 V ~ 40 V | 0°C ~ 70°C (TA) | TO-220-5 | Inverting,Non-Inverting | N-Channel MOSFET | 60ns,60ns | 0.8V,2.2V | 2A,2A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 5 PIN TO-220 INVERTING
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 Formed Leads | Inverting | IGBT,N-Channel,P-Channel MOSFET | 25ns,18ns | 0.8V,3V | 14A,14A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 5PIN TO-220 NON INVERTING
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 Formed Leads | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 25ns,18ns | 0.8V,3V | 14A,14A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC HIGH CURRENT FET DRVR TO220-5
|
Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | Inverting,Non-Inverting | IGBT,N-Channel MOSFET | 85ns,85ns | 0.8V,2V | 6A,6A | ||||
Texas Instruments |
6
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH CURRENT FET DRVR TO220-5
|
Tube | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | Inverting,Non-Inverting | IGBT,N-Channel MOSFET | 85ns,85ns | 0.8V,2V | 6A,6A | ||||
Microchip Technology |
990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 9A INV TO220-5
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | TO-220-5 | Inverting | IGBT,N-Channel,P-Channel MOSFET | 38ns,33ns | 0.8V,2.4V | 10A,10A | ||||
Microchip Technology |
845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A NON-INV TO220-5
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | TO-220-5 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 38ns,33ns | 0.8V,2.4V | 10A,10A | ||||
Microchip Technology |
1,037
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 12A HS TO220-5
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | TO-220-5 | Inverting | IGBT,N-Channel MOSFET | 20ns,24ns | 0.8V,2.4V | 12A,12A | ||||
Microchip Technology |
791
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVR MOSF 12A LOSIDE TO220-5
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | TO-220-5 | Non-Inverting | IGBT,N-Channel MOSFET | 20ns,24ns | 0.8V,2.4V | 12A,12A | ||||
Microchip Technology |
133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LS TO-220-5
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | TO-220-5 | Non-Inverting | IGBT,N-Channel MOSFET | 20ns,24ns | 0.8V,2.4V | 9A,9A | ||||
Microchip Technology |
169
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 12A HS TO220-5
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | TO-220-5 | Inverting | IGBT,N-Channel,P-Channel MOSFET | 30ns,32ns | 0.8V,2.4V | 13A,13A | ||||
Microchip Technology |
218
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 9A N-INV TO220-5
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | TO-220-5 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 60ns,60ns | 0.8V,2.4V | 9A,9A | ||||
Microchip Technology |
111
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 6A TO220-5
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | TO-220-5 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 20ns,20ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
85
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LS TO-220-5
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | TO-220-5 | Inverting | IGBT,N-Channel MOSFET | 20ns,24ns | 0.8V,2.4V | 9A,9A |