- Voltage - Supply:
-
- Operating Temperature:
-
- Supplier Device Package:
-
- Channel Type:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 119
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
42,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
Tape & Reel (TR) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (3x3) | Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
42,369
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
Cut Tape (CT) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (3x3) | Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
42,369
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (3x3) | Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
10,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
Tape & Reel (TR) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (3x3) | Inverting,Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
Cut Tape (CT) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (3x3) | Inverting,Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (3x3) | Inverting,Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
4,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DFN-EP (5x4) | Non-Inverting | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
4,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
|
Cut Tape (CT) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DFN-EP (5x4) | Non-Inverting | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
4,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DFN-EP (5x4) | Non-Inverting | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR INV 1.5A 8-DFN
|
Tape & Reel (TR) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (3x3) | Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV 1.5A 8-DFN
|
Cut Tape (CT) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (3x3) | Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DFN (3x3) | Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A MOSFET 8 DFN DUAL INV/NON-INV
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DFN-EP (5x4) | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A 8 DFN DUAL INVERTING
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DFN-EP (5x4) | Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 2A DUAL HS 8DFN
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DFN-EP (5x4) | Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8DFN
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DFN-EP (5x4) | Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
Microchip Technology |
377
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A NON-INV 8DFN
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 38ns,33ns | 0.8V,2.4V | 10A,10A | ||||
Microchip Technology |
260
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 9A INV 8DFN
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 38ns,33ns | 0.8V,2.4V | 10A,10A | ||||
Microchip Technology |
300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8DFN
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 15ns,18ns | 0.8V,2.4V | 4.5A,4.5A | ||||
Microchip Technology |
300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A 8DFN-S
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN-S (6x5) | Non-Inverting | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 25ns,25ns | 0.8V,2.4V | 3A,3A |