- Packaging:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 17
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5L
|
Tape & Reel (TR) | μHVIC | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Single | 1 | IGBT,N-Channel MOSFET | 85ns,40ns | 0.6V,2.7V | 300mA,550mA | ||||
Infineon Technologies |
4,788
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5L
|
Cut Tape (CT) | μHVIC | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Single | 1 | IGBT,N-Channel MOSFET | 85ns,40ns | 0.6V,2.7V | 300mA,550mA | ||||
Infineon Technologies |
4,788
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5L
|
- | μHVIC | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Single | 1 | IGBT,N-Channel MOSFET | 85ns,40ns | 0.6V,2.7V | 300mA,550mA | ||||
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRV SGL TTL 2A SOT23-5
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Single | 1 | N-Channel MOSFET | 19ns,13ns | 0.8V,2V | 2.5A,2.8A | ||||
ON Semiconductor |
5,984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRV SGL TTL 2A SOT23-5
|
Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Single | 1 | N-Channel MOSFET | 19ns,13ns | 0.8V,2V | 2.5A,2.8A | ||||
ON Semiconductor |
5,984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRV SGL TTL 2A SOT23-5
|
- | - | -40°C ~ 125°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Single | 1 | N-Channel MOSFET | 19ns,13ns | 0.8V,2V | 2.5A,2.8A | ||||
STMicroelectronics |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | 2 | IGBT,N-Channel MOSFET | 45ns,35ns | 0.8V,2.5V | 4A,4A | ||||
STMicroelectronics |
2,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | 2 | IGBT,N-Channel MOSFET | 45ns,35ns | 0.8V,2.5V | 4A,4A | ||||
STMicroelectronics |
2,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | 2 | IGBT,N-Channel MOSFET | 45ns,35ns | 0.8V,2.5V | 4A,4A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5
|
Tape & Reel (TR) | μHVIC | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Single | 1 | IGBT,N-Channel MOSFET | 10ns,10ns | 0.6V,2.7V | 1.5A,1.5A | ||||
Infineon Technologies |
2,237
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5
|
Cut Tape (CT) | μHVIC | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Single | 1 | IGBT,N-Channel MOSFET | 10ns,10ns | 0.6V,2.7V | 1.5A,1.5A | ||||
Infineon Technologies |
2,237
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE SOT23-5
|
- | μHVIC | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Single | 1 | IGBT,N-Channel MOSFET | 10ns,10ns | 0.6V,2.7V | 1.5A,1.5A | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Independent | 2 | IGBT,N-Channel MOSFET | 45ns,35ns | 0.8V,2.5V | 4A,4A | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8MSOP
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Independent | 2 | IGBT,N-Channel MOSFET | 45ns,35ns | 0.8V,2.5V | 4A,4A | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8MSOP
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Independent | 2 | IGBT,N-Channel MOSFET | 45ns,35ns | 0.8V,2.5V | 4A,4A | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8MSOP
|
- | - | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Independent | 2 | IGBT,N-Channel MOSFET | 45ns,35ns | 0.8V,2.5V | 4A,4A | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8MSOP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Independent | 2 | IGBT,N-Channel MOSFET | 45ns,35ns | 0.8V,2.5V | 4A,4A |