Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 159
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
UCC27517AQDBVRQ1
Texas Instruments
15,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Inverting,Non-Inverting Single 1 IGBT,N-Channel MOSFET - 8ns,7ns 1V,2.4V 4A,4A
UCC27517AQDBVRQ1
Texas Instruments
18,812
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
Cut Tape (CT) 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Inverting,Non-Inverting Single 1 IGBT,N-Channel MOSFET - 8ns,7ns 1V,2.4V 4A,4A
UCC27517AQDBVRQ1
Texas Instruments
18,812
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
- 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Inverting,Non-Inverting Single 1 IGBT,N-Channel MOSFET - 8ns,7ns 1V,2.4V 4A,4A
UCC27511AQDBVRQ1
Texas Instruments
9,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6SOT23
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Inverting,Non-Inverting Single 1 IGBT,N-Channel MOSFET - 8ns,7ns 1V,2.4V 4A,8A
UCC27511AQDBVRQ1
Texas Instruments
13,628
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6SOT23
Cut Tape (CT) 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Inverting,Non-Inverting Single 1 IGBT,N-Channel MOSFET - 8ns,7ns 1V,2.4V 4A,8A
UCC27511AQDBVRQ1
Texas Instruments
13,628
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6SOT23
- 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Inverting,Non-Inverting Single 1 IGBT,N-Channel MOSFET - 8ns,7ns 1V,2.4V 4A,8A
FAN3224TMX-F085
ON Semiconductor
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DVR LOSIDE DUAL 4A 8SOIC
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent 2 N-Channel MOSFET - 12ns,9ns 0.8V,2V 5A,5A
FAN3224TMX-F085
ON Semiconductor
7,040
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOSIDE DUAL 4A 8SOIC
Cut Tape (CT) 4.5 V ~ 18 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent 2 N-Channel MOSFET - 12ns,9ns 0.8V,2V 5A,5A
FAN3224TMX-F085
ON Semiconductor
7,040
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOSIDE DUAL 4A 8SOIC
- 4.5 V ~ 18 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent 2 N-Channel MOSFET - 12ns,9ns 0.8V,2V 5A,5A
UCC27424QDRQ1
Texas Instruments
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR DUAL HS 4A 8-SOIC
Tape & Reel (TR) 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27424QDRQ1
Texas Instruments
7,624
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR DUAL HS 4A 8-SOIC
Cut Tape (CT) 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27424QDRQ1
Texas Instruments
7,624
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR DUAL HS 4A 8-SOIC
- 4 V ~ 15 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
FAN1100-F085
ON Semiconductor
6,670
3 jours
-
MOQ: 1  MPQ: 1
IC IGNITION MODULE DRIVER 8SOIC
Cut Tape (CT) 4 V ~ 28 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single 1 IGBT - - 1.2V,2V -
FAN1100-F085
ON Semiconductor
6,670
3 jours
-
MOQ: 1  MPQ: 1
IC IGNITION MODULE DRIVER 8SOIC
- 4 V ~ 28 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single 1 IGBT - - 1.2V,2V -
MAX15024AATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 1CH 16NS 10TDFN
Tape & Reel (TR) 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Single 1 N-Channel MOSFET - 22ns,16ns 0.8V,2V 4A,8A
MAX15024AATB+T
Maxim Integrated
2,143
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 1CH 16NS 10TDFN
Cut Tape (CT) 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Single 1 N-Channel MOSFET - 22ns,16ns 0.8V,2V 4A,8A
MAX15024AATB+T
Maxim Integrated
2,143
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 1CH 16NS 10TDFN
- 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Single 1 N-Channel MOSFET - 22ns,16ns 0.8V,2V 4A,8A
UCC27519AQDBVRQ1
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Non-Inverting Single 1 IGBT,N-Channel MOSFET - 8ns,7ns - 4A,4A
UCC27519AQDBVRQ1
Texas Instruments
4,779
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
Cut Tape (CT) 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Non-Inverting Single 1 IGBT,N-Channel MOSFET - 8ns,7ns - 4A,4A
UCC27519AQDBVRQ1
Texas Instruments
4,779
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
- 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Non-Inverting Single 1 IGBT,N-Channel MOSFET - 8ns,7ns - 4A,4A