Découvrez les produits 27
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Gate Type Rise / Fall Time (Typ)
IXDD630YI
IXYS Integrated Circuits Division
4,652
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER LOW SIDE 5TO263
Tube 12.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263-5 Surface Mount Non-Inverting IGBT,N-Channel,P-Channel MOSFET 11ns,11ns
IXDN630CI
IXYS Integrated Circuits Division
1,427
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER LOW SIDE 5TO220
Tube 12.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting IGBT,N-Channel,P-Channel MOSFET 11ns,11ns
IXDD630MYI
IXYS Integrated Circuits Division
1,249
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER LOW SIDE TO-263-5
Tube 9 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263-5 Surface Mount Non-Inverting IGBT,N-Channel,P-Channel MOSFET 11ns,11ns
IXRFD630
IXYS-RF
3,907
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR RF 30A HI DCB
Tube 8 V ~ 18 V -40°C ~ 150°C (TJ) 6-SMD,Flat Lead Exposed Pad - - Non-Inverting N-Channel,P-Channel MOSFET 4ns,4ns
IXRFD631-NRF
IXYS-RF
672
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR RF 30A LOW DCB
Tube 8 V ~ 18 V -40°C ~ 150°C (TJ) 6-SMD,Flat Lead Exposed Pad - - Non-Inverting N-Channel,P-Channel MOSFET 4ns,4ns
IXDI630YI
IXYS Integrated Circuits Division
695
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER LOW SIDE 5TO263
Tube 12.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263-5 Surface Mount Inverting IGBT,N-Channel,P-Channel MOSFET 11ns,11ns
IXDN630YI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DRIVER LOW SIDE 5TO263
Tube 12.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263-5 Surface Mount Non-Inverting IGBT,N-Channel,P-Channel MOSFET 11ns,11ns
IXDI630MYI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 250  MPQ: 1
IC GATE DRIVER LOW SIDE 5TO263
Tube 9 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263-5 Surface Mount Inverting IGBT,N-Channel,P-Channel MOSFET 11ns,11ns
IXDN630MYI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 250  MPQ: 1
IC GATE DRIVER LOW SIDE 5TO263
Tube 9 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263-5 Surface Mount Non-Inverting IGBT,N-Channel,P-Channel MOSFET 11ns,11ns
IXDN430MYI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET/IGBT DRIVER TO-263
Bulk 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Non-Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns
IXDD430MYI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
Bulk 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Non-Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns
IXDD430YI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
Bulk 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Non-Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns
IXDI430MYI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
Bulk 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns
IXDI430YI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
Bulk 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns
IXDN430YI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC DRVR MOSF/IGBT 30A TO263-5
Tube 8.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Non-Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns
IXDS430SI
IXYS
Enquête
-
-
MOQ: 27  MPQ: 1
IC DRVR MOSF/IGBT 30A 28-SOIC
Bulk 8.5 V ~ 35 V -55°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting,Non-Inverting IGBT,N-Channel,P-Channel MOSFET 18ns,16ns
IXDI630CI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 250  MPQ: 1
IC GATE DRIVER LOW SIDE 5TO220
Tube 12.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting IGBT,N-Channel,P-Channel MOSFET 11ns,11ns
IXDD630CI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 250  MPQ: 1
IC GATE DRIVER LOW SIDE 5TO220
Tube 12.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting IGBT,N-Channel,P-Channel MOSFET 11ns,11ns
IXDD630MCI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 250  MPQ: 1
IC GATE DRIVER LOW SIDE 5TO220
Tube 9 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Non-Inverting IGBT,N-Channel,P-Channel MOSFET 11ns,11ns
IXDI630MCI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 250  MPQ: 1
IC GATE DRIVER LOW SIDE 5TO220
Tube 9 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 TO-220-5 Through Hole Inverting IGBT,N-Channel,P-Channel MOSFET 11ns,11ns