- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 194
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
|
ON Semiconductor |
42,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
43,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
43,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
10,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
10,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Tape & Reel (TR) | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
4,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Cut Tape (CT) | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
4,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
- | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
Infineon Technologies |
20,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MFET DRVR HIGH SIDE 8SOIC
|
Tape & Reel (TR) | - | 6 V ~ 36 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | N-Channel MOSFET | - | 1μs，1μs | 0.9V，2.7V | - | ||
|
|
|
Infineon Technologies |
20,745
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MFET DRVR HIGH SIDE 8SOIC
|
Cut Tape (CT) | - | 6 V ~ 36 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | N-Channel MOSFET | - | 1μs，1μs | 0.9V，2.7V | - | ||
|
|
|
Infineon Technologies |
20,745
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MFET DRVR HIGH SIDE 8SOIC
|
- | - | 6 V ~ 36 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | N-Channel MOSFET | - | 1μs，1μs | 0.9V，2.7V | - | ||
|
|
|
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
ICMOSFET DVR W/LOSS PROT 8-SOIC
|
Tape & Reel (TR) | - | 7 V ~ 26 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | 1.5V，3.5V | - | ||
|
|
|
Texas Instruments |
7,982
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
ICMOSFET DVR W/LOSS PROT 8-SOIC
|
Cut Tape (CT) | - | 7 V ~ 26 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | 1.5V，3.5V | - | ||
|
|
|
Texas Instruments |
7,982
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
ICMOSFET DVR W/LOSS PROT 8-SOIC
|
- | - | 7 V ~ 26 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | 1.5V，3.5V | - | ||
|
|
|
ON Semiconductor |
1,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tube | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
5,844
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
Tube | Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 300V | 65ns，25ns | - | 450mA，450mA |
