- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 31
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
2,399
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC HIGH SIDE DRIVER SGL 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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|
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Infineon Technologies |
2,200
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER LIMITING 8-DIP
|
0 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 500V | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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|
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Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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|
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Infineon Technologies |
228
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURR SENSE 1CH 600V 8DIP
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12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
25
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET/IGBT 1CH 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 6V，9.5V | 290mA，600mA | ||
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Infineon Technologies |
5
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET/IGBT 1CH 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 6V，9.5V | 290mA，600mA | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC HIGH SIDE DRIVER 8DIP
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9 V ~ 12 V | -40°C ~ 150°C (TJ) | 8-DIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 23ns，20ns | 0.8V，3V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC DVR CURR SENSE 1CH 600V 8DIP
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9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
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STMicroelectronics |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC DRIVER GATE IGBT/MOSFET 8DIP
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12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-DIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 300 MPQ: 1
|
IC MOSFET DRIVER SGL-CH 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 150 MPQ: 1
|
IC MOSFET DRIVER LIMITING 8-DIP
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0 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 500V | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 150 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
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13 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 250ns，250ns | 0.8V，3V | 130mA，130mA | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 2800 MPQ: 1
|
IC PWM HIGH-SIDE SWITCH 8-DIP
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25V (Max) | -40°C ~ 150°C (TJ) | 8-DIP | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | - | - | ||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
|
IC DRIVER MOSFET HI SIDE HS 8DIP
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12 V ~ 36 V | -40°C ~ 85°C (TA) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | - | 400ns，400ns | 0.8V，2V | - | ||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 2800 MPQ: 1
|
IC PWM HIGH-SIDE SWITCH 8-DIP
|
25V (Max) | -40°C ~ 150°C (TJ) | 8-DIP | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | - | - | ||
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STMicroelectronics |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
|
IC IGBT/MOSFET DRIVER ADV 8-DIP
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12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-DIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 250 MPQ: 1
|
IC DRIVER CURR SENSE 1CH 8-DIP
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9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER CURR SENSE 1CH 8-DIP
|
12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
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Vishay Siliconix |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
|
IC MOSFET DVR ADAPTIVE PWR 8DIP
|
10.8 V ~ 16.5 V | -40°C ~ 150°C (TJ) | 8-PDIP | Non-Inverting | Single | 1 | N-Channel MOSFET | 500V | 50ns，35ns | - | 1A，1A |
