- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 15
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HISIDE N-CH 3PH 16SOIC
|
Tape & Reel (TR) | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 16-SOIC | Inverting | 3-Phase | 3 | N-Channel MOSFET | 95V | 35ns,30ns | 1V,2.5V | - | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 960 MPQ: 1
|
IC DRIVER HISIDE N-CH 3PH 16SOIC
|
Tube | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 16-SOIC | Inverting | 3-Phase | 3 | N-Channel MOSFET | 95V | 35ns,30ns | 1V,2.5V | - | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC PWM HIGH-SIDE SWITCH 16-SOIC
|
Tape & Reel (TR) | 25V (Max) | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | - | - | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC PWM HIGH-SIDE SWITCH 16-SOIC
|
Tape & Reel (TR) | 25V (Max) | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | - | - | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 960 MPQ: 1
|
IC DRIVER HISIDE N-CH 3PH 16SOIC
|
Tube | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 16-SOIC | Inverting | 3-Phase | 3 | N-Channel MOSFET | 95V | 35ns,30ns | 1V,2.5V | - | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HISIDE N-CH 3PH 16SOIC
|
Tape & Reel (TR) | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 16-SOIC | Inverting | 3-Phase | 3 | N-Channel MOSFET | 95V | 35ns,30ns | 1V,2.5V | - | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC CTRLR PWM POWER MOS SO-16
|
Tape & Reel (TR) | 6 V ~ 16 V | -55°C ~ 150°C (TJ) | 16-SO | Non-Inverting | Single | 1 | N-Channel,P-Channel MOSFET | - | - | 0.8V,2V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH SIDE DUAL 16-SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.6V,3.5V | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH SIDE DUAL 16-SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.6V,3.5V | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH SIDE DUAL 16-SOIC
|
- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.6V,3.5V | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC DVR DUAL HIGH SIDE 16-SOIC
|
Tube | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.6V,3.5V | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC DVR LOW SIDE/DUAL HI 16-SOIC
|
Tube | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 60ns,20ns | 0.8V,3.5V | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 135 MPQ: 1
|
IC DVR HI SIDE DUAL 600V 16-SOIC
|
Tube | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,25ns | 0.6V,3.5V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HI SIDE DUAL 600V 16SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 60ns,20ns | 0.8V,3.5V | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HI SIDE DUAL 600V 16SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,25ns | 0.6V,3.5V | 500mA,500mA |