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- Packaging：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 3,131
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
1,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，40ns | 0.8V，2.2V | 250mA，500mA | ||
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Maxim Integrated |
190
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 125V | 65ns，65ns | - | 2A，2A | ||
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Maxim Integrated |
187
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | 2 | N-Channel MOSFET | 125V | 65ns，65ns | - | 2A，2A | ||
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|
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Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
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Tape & Reel (TR) | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 16ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
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|
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Diodes Incorporated |
3,076
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Cut Tape (CT) | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 16ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
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|
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Diodes Incorporated |
3,076
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 16ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
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|
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Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
Tape & Reel (TR) | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 (type TH) | Surface Mount | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
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|
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Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
Cut Tape (CT) | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 (type TH) | Surface Mount | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
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|
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Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
- | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 (type TH) | Surface Mount | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
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|
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
3,056
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
3,056
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Diodes Incorporated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Diodes Incorporated |
3,648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
|
Diodes Incorporated |
3,648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Renesas Electronics America Inc. |
6,000
|
3 jours |
-
|
MOQ: 6000 MPQ: 1
|
IC MOSFET DRVR SYNC BUCK 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN-EP (2x2) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 33V | 8ns，8ns | 0.5V，2V | 2A，2A | ||
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|
|
Renesas Electronics America Inc. |
10,315
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC BUCK 8DFN
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN-EP (2x2) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 33V | 8ns，8ns | 0.5V，2V | 2A，2A | ||
|
|
|
Infineon Technologies |
3,800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 200V | 70ns，30ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
2,815
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，30ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
4,250
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 200V 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA |
