- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 342
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Renesas Electronics America Inc. |
1,899
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET 3PHASE N-CH 24DIP
|
Tube | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-DIP (0.300",7.62mm) | 24-PDIP | Through Hole | Inverting,Non-Inverting | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns,10ns | 1V,2.5V | 500mA,500mA | ||||
Infineon Technologies |
222
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Through Hole | Inverting | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
1,494
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
Tape & Reel (TR) | EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-DSO-28 | Surface Mount | Non-Inverting | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
1,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
Cut Tape (CT) | EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-DSO-28 | Surface Mount | Non-Inverting | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
1,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
- | EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | PG-DSO-28 | Surface Mount | Non-Inverting | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
Tape & Reel (TR) | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
1,380
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
Cut Tape (CT) | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
1,380
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
- | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
1,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 90ns,40ns | 0.8V,2.2V | 250mA,500mA | ||||
Texas Instruments |
250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
38V THREE-PHASE SMART GATE DRIVE
|
Tape & Reel (TR) | - | 6 V ~ 38 V | -40°C ~ 125°C | 40-VFQFN Exposed Pad | 40-VQFN (6x6) | Surface Mount | Non-Inverting | High-Side or Low-Side | 3 | N-Channel MOSFET | - | 300ns,150ns | 0.8V,1.5V | 150mA,300mA | ||||
Texas Instruments |
292
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
38V THREE-PHASE SMART GATE DRIVE
|
Cut Tape (CT) | - | 6 V ~ 38 V | -40°C ~ 125°C | 40-VFQFN Exposed Pad | 40-VQFN (6x6) | Surface Mount | Non-Inverting | High-Side or Low-Side | 3 | N-Channel MOSFET | - | 300ns,150ns | 0.8V,1.5V | 150mA,300mA | ||||
Texas Instruments |
292
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
38V THREE-PHASE SMART GATE DRIVE
|
- | - | 6 V ~ 38 V | -40°C ~ 125°C | 40-VFQFN Exposed Pad | 40-VQFN (6x6) | Surface Mount | Non-Inverting | High-Side or Low-Side | 3 | N-Channel MOSFET | - | 300ns,150ns | 0.8V,1.5V | 150mA,300mA | ||||
STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | Surface Mount | - | Half-Bridge | 6 | N-Channel MOSFET | - | 35ns,35ns | 0.8V,2V | - | ||||
STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Cut Tape (CT) | Automotive,AEC-Q100 | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | Surface Mount | - | Half-Bridge | 6 | N-Channel MOSFET | - | 35ns,35ns | 0.8V,2V | - | ||||
STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
- | Automotive,AEC-Q100 | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | Surface Mount | - | Half-Bridge | 6 | N-Channel MOSFET | - | 35ns,35ns | 0.8V,2V | - | ||||
Infineon Technologies |
2,004
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
385
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 44PLCC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC FET DVR 3CH SYNC BUCK 24WQFN
|
Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 24-WQFN Exposed Pad | 24-WQFN (5x5) | Surface Mount | Inverting,Non-Inverting | Half-Bridge | 6 | N-Channel MOSFET | 15V | 25ns,12ns | 0.7V,3.2V | - | ||||
Richtek USA Inc. |
1,335
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3CH SYNC BUCK 24WQFN
|
Cut Tape (CT) | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 24-WQFN Exposed Pad | 24-WQFN (5x5) | Surface Mount | Inverting,Non-Inverting | Half-Bridge | 6 | N-Channel MOSFET | 15V | 25ns,12ns | 0.7V,3.2V | - |