- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 342
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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MOQ: 1 MPQ: 1
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IC BRIDGE DVR 3PH 600V 44-PLCC
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- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 125 MPQ: 1
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IC BRIDGE DVR 3PH 600V 28-SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 125 MPQ: 1
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IC BRIDGE DVR 3PH 600V 28-SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 100 MPQ: 1
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IC BRIDGE DVR 3PH 600V 28-SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 125 MPQ: 1
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IC BRIDGE DVR 3PH 600V 28-SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 108 MPQ: 1
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IC DVR 3-PHASE BRIDGE PLCC44
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DVR 3-PHASE BRIDGE 28SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 108 MPQ: 1
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IC DVR 3-PHASE BRIDGE PLCC44
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DVR 3-PHASE BRIDGE 28SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 108 MPQ: 1
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IC DVR 3-PHASE BRIDGE PLCC44
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DVR 3-PHASE BRIDGE 28SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 108 MPQ: 1
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IC DVR 3-PHASE BRIDGE PLCC44
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DVR 3-PHASE BRIDGE 28SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 100 MPQ: 1
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IC GATE DRIVER HV 3PHASE 28SOIC
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Tube | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 3120 MPQ: 1
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IC MOSFET DRIVER
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-VFQFN Exposed Pad | 28-MLPQ (5x5) | Surface Mount | Non-Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 252 MPQ: 1
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IC DRVR IGBT/MOSFET 20SOIC
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Tube | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC GATE DRIVE AUTOMOTIVE 28SOIC
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Tube | Automotive，AEC-Q100 | 24 V ~ 150 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | Half-Bridge | 6 | N-Channel MOSFET | 200V | 100ns，35ns | 0.7V，2.5V | 200mA，350mA | ||
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Texas Instruments |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 48HTQFP
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Tape & Reel (TR) | Automotive，AEC-Q100 | 4.4 V ~ 45 V | -40°C ~ 150°C (TJ) | 48-TQFP Exposed Pad | 48-HTQFP (7x7) | Surface Mount | Non-Inverting | Half-Bridge | 6 | N-Channel MOSFET | - | - | 0.8V，2V | 1A，1A | ||
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Texas Instruments |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 48HTQFP
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Tape & Reel (TR) | Automotive，AEC-Q100 | 4.4 V ~ 45 V | -40°C ~ 175°C (TJ) | 48-TQFP Exposed Pad | 48-HTQFP (7x7) | Surface Mount | Non-Inverting | Half-Bridge | 6 | N-Channel MOSFET | - | - | 0.8V，2V | 1A，1A | ||
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Texas Instruments |
Enquête
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MOQ: 1000 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 48HTQFP
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Tape & Reel (TR) | Automotive，AEC-Q100 | 4.4 V ~ 45 V | -40°C ~ 150°C (TJ) | 48-TQFP Exposed Pad | 48-HTQFP (7x7) | Surface Mount | Non-Inverting | Half-Bridge | 6 | N-Channel MOSFET | - | - | 0.8V，2V | 1A，1A |
