- Voltage - Supply：
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- Operating Temperature：
-
- Driven Configuration：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 78
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
STMicroelectronics |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-SOIC
|
Tape & Reel (TR) | 17V (Max) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 70ns，40ns | 1.1V，1.8V | 400mA，650mA | ||
|
|
|
STMicroelectronics |
9,768
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-SOIC
|
Cut Tape (CT) | 17V (Max) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 70ns，40ns | 1.1V，1.8V | 400mA，650mA | ||
|
|
|
STMicroelectronics |
9,768
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-SOIC
|
- | 17V (Max) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 70ns，40ns | 1.1V，1.8V | 400mA，650mA | ||
|
|
|
STMicroelectronics |
1,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 8-SOIC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Inverting，Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 1.1V，1.9V | 290mA，430mA | ||
|
|
|
STMicroelectronics |
1,858
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-SOIC
|
Tube | 17V (Max) | -45°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.5V，3.6V | 400mA，650mA | ||
|
|
|
STMicroelectronics |
2,460
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-SOIC
|
Tube | 17V (Max) | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 70ns，40ns | 1.1V，1.8V | 400mA，650mA | ||
|
|
|
Diodes Incorporated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
3,648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
3,648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
Tape & Reel (TR) | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209"，5.30mm Width) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
4,206
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
Cut Tape (CT) | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209"，5.30mm Width) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
4,206
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209"，5.30mm Width) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
Tape & Reel (TR) | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209"，5.30mm Width) | Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
2,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
Cut Tape (CT) | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209"，5.30mm Width) | Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
2,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209"，5.30mm Width) | Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
Tape & Reel (TR) | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209"，5.30mm Width) | Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
1,139
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
Cut Tape (CT) | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209"，5.30mm Width) | Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
1,139
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209"，5.30mm Width) | Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HV SO8
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA |
