- Voltage - Supply：
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- Operating Temperature：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 19
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
1,461
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL NONINV 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm)，6 Leads | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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STMicroelectronics |
2,107
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE HV 8-DIP
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Tube | 17V (Max) | -45°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.5V，3.6V | 400mA，650mA | ||
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IXYS Integrated Circuits Division |
149
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3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-DI
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
633
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A INV 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
581
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL ENABLE 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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STMicroelectronics |
843
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-DIP
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Tube | 17V (Max) | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 70ns，40ns | 1.1V，1.8V | 400mA，650mA | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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2A MOSFET 8 DIP DUAL INV/NON-INV
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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2A 8 DIP DUAL INVERTING
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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STMicroelectronics |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-DIP
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Tube | 17V (Max) | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.5V，3.6V | 400mA，650mA | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HI/LO SIDE 8-DIP
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Tube | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | 4.5A，4.5A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HI LO SIDE 8-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 60ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
3A DUAL NON-INVERTING LOW SIDE G
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- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | CMOS/TTL | Low-Side | IGBT | - | 18ns，18ns | 0.8V，3V | 3A，3A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR DUAL PWR DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Richtek USA Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC HI-SIDE MOSFET SWITCH DIP8
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Tube | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
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Richtek USA Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC HI-SIDE MOSFET SWITCH DIP8
|
Tube | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
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Richtek USA Inc. |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC HI-SIDE MOSFET SWITCH DIP8
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Tube | 13 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
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Richtek USA Inc. |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
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IC HI-SIDE MOSFET SWITCH DIP8
|
Tube | 13 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
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Richtek USA Inc. |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR DIP8
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Tube | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA |
