- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 14
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC GATE DVR HV 10-WDFN
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | W-DFN3030-10 | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Diodes Incorporated |
2,647
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | W-DFN3030-10 | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Diodes Incorporated |
2,647
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | W-DFN3030-10 | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN (3x3) | Non-Inverting | Low-Side | N-Channel MOSFET | - | 42ns，30ns | 0.8V，2V | 2A，4A | ||
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Maxim Integrated |
678
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN (3x3) | Non-Inverting | Low-Side | N-Channel MOSFET | - | 42ns，30ns | 0.8V，2V | 2A，4A | ||
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|
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Maxim Integrated |
678
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
- | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN (3x3) | Non-Inverting | Low-Side | N-Channel MOSFET | - | 42ns，30ns | 0.8V，2V | 2A，4A | ||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | - | 48ns，32ns | 2V，4.25V | 2A，4A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | - | 42ns，30ns | 0.8V，2V | 2A，4A | ||
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | - | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | - | 48ns，32ns | - | 2A，4A | ||
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | - | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | - | 48ns，32ns | - | 2A，4A | ||
|
|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | - | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | - | 48ns，32ns | - | 2A，4A | ||
|
|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | - | 48ns，32ns | 2V，4.25V | 2A，4A | ||
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | - | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | - | 48ns，32ns | - | 2A，4A | ||
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 125°C | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | - | 48ns，32ns | 2V，4.25V | 2A，4A |
