- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 135
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
15,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HISIDE 2CH 14-SOP
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.3V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
17,977
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HISIDE 2CH 14-SOP
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.3V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
17,977
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HISIDE 2CH 14-SOP
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.3V,2.5V | 350mA,650mA | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-DSO | Non-Inverting | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | 600V | 48ns,37ns | 1.1V,1.7V | 1.8A,2.3A | ||||
Infineon Technologies |
9,815
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
Cut Tape (CT) | EiceDriver | 10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-DSO | Non-Inverting | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | 600V | 48ns,37ns | 1.1V,1.7V | 1.8A,2.3A | ||||
Infineon Technologies |
9,815
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
- | EiceDriver | 10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-DSO | Non-Inverting | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | 600V | 48ns,37ns | 1.1V,1.7V | 1.8A,2.3A | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | PG-DSO-14 | Non-Inverting | Half-Bridge | 2 | IGBT | 600V | 48ns,37ns | 1.1V,1.7V | 2.3A,2.3A | ||||
Infineon Technologies |
4,972
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
Cut Tape (CT) | EiceDriver | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | PG-DSO-14 | Non-Inverting | Half-Bridge | 2 | IGBT | 600V | 48ns,37ns | 1.1V,1.7V | 2.3A,2.3A | ||||
Infineon Technologies |
4,972
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
- | EiceDriver | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | PG-DSO-14 | Non-Inverting | Half-Bridge | 2 | IGBT | 600V | 48ns,37ns | 1.1V,1.7V | 2.3A,2.3A | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 14SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Inverting,Non-Inverting | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
9,262
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 14SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Inverting,Non-Inverting | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
9,262
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 14SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Inverting,Non-Inverting | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 14-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Non-Inverting | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
6,862
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 14-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Non-Inverting | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
6,862
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 14-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Non-Inverting | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
9,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Inverting,Non-Inverting | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
ON Semiconductor |
6,144
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
ON Semiconductor |
6,144
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Non-Inverting | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A |