Fabricant:
Series:
Supplier Device Package:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 12
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Operating Temperature Package / Case Supplier Device Package Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
2EDL23I06PJXUMA1
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 14DSO
Tape & Reel (TR) EiceDriver -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) PG-DSO-14 Half-Bridge 2 IGBT 600V 48ns,37ns 1.1V,1.7V 2.3A,2.3A
2EDL23I06PJXUMA1
Infineon Technologies
4,972
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 14DSO
Cut Tape (CT) EiceDriver -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) PG-DSO-14 Half-Bridge 2 IGBT 600V 48ns,37ns 1.1V,1.7V 2.3A,2.3A
2EDL23I06PJXUMA1
Infineon Technologies
4,972
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 14DSO
- EiceDriver -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) PG-DSO-14 Half-Bridge 2 IGBT 600V 48ns,37ns 1.1V,1.7V 2.3A,2.3A
2EDL05N06PJXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER GATE HALF BRIDGE 14DSO
Tape & Reel (TR) EiceDriver -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-DSO Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 600V 48ns,24ns 1.1V,1.7V -
2EDL05N06PJXUMA1
Infineon Technologies
2,442
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER GATE HALF BRIDGE 14DSO
Cut Tape (CT) EiceDriver -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-DSO Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 600V 48ns,24ns 1.1V,1.7V -
2EDL05N06PJXUMA1
Infineon Technologies
2,442
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER GATE HALF BRIDGE 14DSO
- EiceDriver -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-DSO Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 600V 48ns,24ns 1.1V,1.7V -
BD6562FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR IGBT/MOSFET 2CH 16SSOP
Tape & Reel (TR) - -25°C ~ 150°C (TJ) 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA
BD6562FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR IGBT/MOSFET 2CH 16SSOP
Cut Tape (CT) - -25°C ~ 150°C (TJ) 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA
BD6562FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR IGBT/MOSFET 2CH 16SSOP
- - -25°C ~ 150°C (TJ) 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA
BD6563FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR IGBT/MOSFET 3CH 16SSOP
Tape & Reel (TR) - -25°C ~ 150°C (TJ) 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Low-Side 3 IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA
BD6563FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR IGBT/MOSFET 3CH 16SSOP
Cut Tape (CT) - -25°C ~ 150°C (TJ) 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Low-Side 3 IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA
BD6563FV-LBE2
ROHM Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR IGBT/MOSFET 3CH 16SSOP
- - -25°C ~ 150°C (TJ) 16-LSSOP (0.173",4.40mm Width) 16-SSOPB Low-Side 3 IGBT,N-Channel,P-Channel MOSFET - - - 600mA,600mA