- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 163
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
Tape & Reel (TR) | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
7,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
Cut Tape (CT) | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
7,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
- | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Tape & Reel (TR) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Texas Instruments |
16,709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Cut Tape (CT) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Texas Instruments |
16,709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
ROHM Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
2CH HALF-BRIDGE GATE DRIVER
|
Tape & Reel (TR) | 3 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 24-VSSOP (0.220",5.60mm Width) Exposed Pad | 24-HTSSOP-B | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | - | - | - | - | ||||
ROHM Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
2CH HALF-BRIDGE GATE DRIVER
|
Cut Tape (CT) | 3 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 24-VSSOP (0.220",5.60mm Width) Exposed Pad | 24-HTSSOP-B | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | - | - | - | - | ||||
ROHM Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
2CH HALF-BRIDGE GATE DRIVER
|
- | 3 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 24-VSSOP (0.220",5.60mm Width) Exposed Pad | 24-HTSSOP-B | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | - | - | - | - | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8WSON
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (4x4) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns,15ns | 0.8V,2.2V | 1A,1A | ||||
Texas Instruments |
1,955
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8WSON
|
Cut Tape (CT) | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (4x4) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns,15ns | 0.8V,2.2V | 1A,1A | ||||
Texas Instruments |
1,955
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8WSON
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (4x4) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns,15ns | 0.8V,2.2V | 1A,1A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
Tape & Reel (TR) | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
2,562
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
Cut Tape (CT) | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
2,562
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
- | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP | Non-Inverting | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
Texas Instruments |
5,315
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP | Non-Inverting | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 7ns,6ns | 1V,2.3V | 5A,5A |