- Packaging：
-
- Series：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Input Type：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Conditions sélectionnées:
Découvrez les produits 13
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Non-Inverting | N-Channel MOSFET | 42ns，30ns | 0.8V，2V | ||
|
|
|
Maxim Integrated |
678
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Non-Inverting | N-Channel MOSFET | 42ns，30ns | 0.8V，2V | ||
|
|
|
Maxim Integrated |
678
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
- | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Non-Inverting | N-Channel MOSFET | 42ns，30ns | 0.8V，2V | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | N-Channel MOSFET | 48ns，32ns | 2V，4.25V | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | N-Channel MOSFET | 42ns，30ns | 0.8V，2V | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | - | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | N-Channel MOSFET | 48ns，32ns | - | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | - | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | N-Channel MOSFET | 48ns，32ns | - | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | - | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | N-Channel MOSFET | 48ns，32ns | - | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | N-Channel MOSFET | 48ns，32ns | 2V，4.25V | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | - | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | N-Channel MOSFET | 48ns，32ns | - | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 125°C | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | N-Channel MOSFET | 48ns，32ns | 2V，4.25V | ||
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC IGBT GATE DVR DUAL 16SOIC
|
Tube | - | -10 V ~ 25 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Non-Inverting | IGBT | -，8ns | 0.8V，2V | |||
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC IGBT GATE DVR DUAL 16SOIC
|
Tape & Reel (TR) | - | -10 V ~ 25 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Non-Inverting | IGBT | -，8ns | 0.8V，2V |
