- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 6
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Input Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
1,460
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL SELF OSC 14-DIP
|
10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | RC Input Circuit | 4 | N-Channel MOSFET | 120ns，50ns | 4.7V，9.3V | 180mA，260mA | ||
|
|
|
Infineon Technologies |
44
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 14-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 2 | IGBT，N-Channel MOSFET | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
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|
|
Infineon Technologies |
4
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 2 | IGBT，N-Channel MOSFET | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF 600V 14DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 2 | IGBT，N-Channel MOSFET | 23ns，14ns | 0.8V，2V | 1.4A，1.8A | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC DVR HALF BRIDGE 14-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 2 | IGBT，N-Channel MOSFET | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 2 | IGBT，N-Channel MOSFET | 150ns，50ns | 0.8V，2.9V | 200mA，350mA |
