Voltage - Supply:
Operating Temperature:
Input Type:
Channel Type:
Driven Configuration:
Number of Drivers:
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 12
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
L6498LDTR
STMicroelectronics
2,500
3 jours
-
MOQ: 2500  MPQ: 1
PWR MGMT MOSFET/PWR DRIVER
Tape & Reel (TR) - - - - - - - - - -
L6494LDTR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
PWR MGMT MOSFET/PWR DRIVER
Tape & Reel (TR) - - - - - - - - - -
TD350ETR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER IGBT/MOSFET 14-SOIC
Tape & Reel (TR) 12 V ~ 26 V -40°C ~ 150°C (TJ) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 130ns,75ns (Max) 0.8V,4.2V 1.5A,2.3A
TD350ETR
STMicroelectronics
1,947
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER IGBT/MOSFET 14-SOIC
Cut Tape (CT) 12 V ~ 26 V -40°C ~ 150°C (TJ) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 130ns,75ns (Max) 0.8V,4.2V 1.5A,2.3A
TD350ETR
STMicroelectronics
1,947
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER IGBT/MOSFET 14-SOIC
- 12 V ~ 26 V -40°C ~ 150°C (TJ) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 130ns,75ns (Max) 0.8V,4.2V 1.5A,2.3A
L6498LD
STMicroelectronics
970
3 jours
-
MOQ: 1  MPQ: 1
PWR MGMT MOSFET/PWR DRIVER
Tube - - - - - - - - - -
L6494LD
STMicroelectronics
959
3 jours
-
MOQ: 1  MPQ: 1
PWR MGMT MOSFET/PWR DRIVER
Tube - - - - - - - - - -
TD350E
STMicroelectronics
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER IGBT/MOSFET 14-SOIC
Tube 12 V ~ 26 V -40°C ~ 150°C (TJ) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 130ns,75ns (Max) 0.8V,4.2V 1.5A,2.3A
TD350IDT
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOS/IGBT ADV 14SOIC
Tape & Reel (TR) 12 V ~ 26 V -40°C ~ 150°C (TJ) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 130ns,75ns (Max) 0.8V,4.2V 1.5A,2.3A
TD350IDT
STMicroelectronics
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER MOS/IGBT ADV 14SOIC
Cut Tape (CT) 12 V ~ 26 V -40°C ~ 150°C (TJ) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 130ns,75ns (Max) 0.8V,4.2V 1.5A,2.3A
TD350IDT
STMicroelectronics
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER MOS/IGBT ADV 14SOIC
- 12 V ~ 26 V -40°C ~ 150°C (TJ) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 130ns,75ns (Max) 0.8V,4.2V 1.5A,2.3A
TD350ID
STMicroelectronics
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER MOS/IGBT ADV 14-SOIC
Tube 12 V ~ 26 V -40°C ~ 150°C (TJ) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 130ns,75ns (Max) 0.8V,4.2V 1.5A,2.3A